2SA988 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SA992 ,PNP SILICON TRANSISTORFEATURES . High Voltage. VCEO I -120 V 52 MAX.
0 Low Output Capacitance. Cob : 2.0 pF TYP. (VCB =- ..
2SA999 , 2SA999
2SA999 , 2SA999
2SAR523EB , General purpose transistor(-50V,-0.1A)
2SB0710 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5478 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5482 , For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
2SC5486 , TRANSISTOR
2SC5488 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5501 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5502 ,NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA988
