2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-922SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Ampli ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-92Applications Unit: mm Low noise : NF = 3dB (typ.) R = 100 Ω, V = −6 V, I = −100 µA, G CE C f ..
2SA970-BL , Low Noise Audio Amplifier Applications
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA984 , LOW FREQUENCY POWER AMP APPLICATIONS
2SC5455 ,NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLDapplications+0.22.8–0.3+0.2• High gain, low noise1.5 –0.1• Small reverse transfer capacitance• Can ..
2SC5464 , NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SC5465 , SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
2SC5472 ,Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1: BaseCollector to base voltage V 9 ..
2SC5477 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5478 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SA970
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92
2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970 Low Noise Audio Amplifier Applications Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA, f = 1 kHz High DC current gain: hFE = 200~700 High breakdown voltage: VCEO = −120 V Low pulse noise. Low 1/f noise
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
VCE � �6 V, IC � �0.1 mA, f � 10 Hz,
RG � 10 k�
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
Weight: 0.21 g (typ.)
