2SA968B ,Silicon PNP Power Transistors TO-220 packageFEATURES:. High Transition Frequency; fT=100MHz (Typ.). Complementary to 2SC2238BMAXIMUM RATINGS (T ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-922SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Ampli ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-92Applications Unit: mm Low noise : NF = 3dB (typ.) R = 100 Ω, V = −6 V, I = −100 µA, G CE C f ..
2SA970-BL , Low Noise Audio Amplifier Applications
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC5454 ,NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLDPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5454NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI M ..
2SC5455 ,NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLDapplications+0.22.8–0.3+0.2• High gain, low noise1.5 –0.1• Small reverse transfer capacitance• Can ..
2SC5464 , NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SC5465 , SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
2SC5472 ,Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1: BaseCollector to base voltage V 9 ..
2SC5477 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SA968B
Silicon PNP Power Transistors TO-220 package
I45E I) D 9897350 UUl7765 l IZITOSLI
T0SHlBATRANSlSTOR TOSHIBA (0riicRsrtiryopro)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
28A9688
T T''; - IC,
Unit in mm
POWER AMPLIFIER APPLICATIONS.
}o.sgg 'atstass
DRIVER STAGE AMPLIFIER APPLICATIONS. "
'iy1-N,i . I
FEATURES: " I
. High Transition Frequency: fTBIOOMHz (Typ.) " i
' Complementary to 2SC2238B ii i I
LSMAX. 3
MAXIMUM RATINGS (Ta=25°C) Q75 H
CHARACTERISTIC SYMBOL RATING UNIT ir
Collector-Base atu 25‘
Voltage 2SA968B vcno -200 V N 3 t
n 1 2 f
Coll t r-E Itt - "
Voltggeo m er 2SA968B VCEO -200 v - KI
Emitter-Base Voltage VEBO -5 V 1,BASE
Collector Current Ic -1.5 A a.C0LLECTOP, (HEAT SINK)
Emitter Current IE 1.5 A S'EMITTER
Collector Power - o JEDEC TO-220AB
Dissipation (Tc=25 C) PC 25 H EIAJ 80-46
Junction Temperature Tj 150 "c TOSHIBA Z-IOAIA
Storage Temperature Range Tstg -55ru150 °C Mounting Kit No. AC75
Height l 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 ph
Emitter" Cut-off Current IEBO 1/EB---5V, Ic=0 - - -1.0 uA
Co11etetor-Ehdtter
Breakdown Voltage 2SA9688 V(BR)CEO lc---imA, IB--0 -an - - ll
Emitter-Base V(BR)EB0 IE=-lmA, IC=0 .-5 - - v
Breakdown Voltage
DC Current Gain hFE vcir-5v, EC=-100mA 70 - 240
(Note)
Collector-Emitter =- =... - - -
Saturation Voltage VCE(sat) IC 500mA, IB 50mA 1.5 V
Base-Emitter Voltage VBE VCE=-5V, Ic=-500mA - - -1.0 V
Transition Frequency fT VCE=-10V, Ttt-100mA - 100 - MHz
Collector Output Capacitance Cob ircBzs-10ir, IE=0, f=1MHz - 3O - pF
Note: hFE Classification o.. 70m140, Y: 120m240
use b © Huavasu 001.??35 3 EITOSLI T4349
SATURATION VOLTAGE DC CURRENT GAIN COLLECTOR CURRENT
COLLECTOR-EMITTER
COLLECTOR CURRENT
VCE (sat) (V)
Ic - VCE fT - IC
g COMMON EMITTER
-m COMMON EMITTER M
To = 251: T 1rcE=-10ir
{a To--- 25'c
'cg BO
o -z 4 -6 -8 ~10 -12 -tt -16 -18 H” 10
COLLECTOR-EMITTER VOLTAGE VCE (v) -5 -20 _30 _50 -100 4300-500 -1000
h”: - Ic COLLECTOR CURRENT 1c (am)
TC=100'C
100 30
a) 25 -25 g 25
GO couuou
EMITTER o
ch=‘ 5V 'iii 20
-uoo:s -001 4105 -a1 -aa -1 .-a 9.2 1
COLLECTOR CURRENT 10 (A) ‘52
VCE (sat) - Ic tt
-G Mr-,
COMMON Am 5
EMITTER 82 (2)
-1 10/13: 10 on O
o 20 IO 60 80 100 120 14.0 160
"15 AMBIENT TEMPERATURE Ta ©
SAFE OPERATING AREA
-on . .
1 x Fd.
CMAX. . . SINGLE
-3 (FULSED? NONREPETITIVE
-atttr 3 It: MAX. A m'o'' PULSE
-aoa5 -oa1 '0.05 -01 -O.3 1 G (WIN t, 0 " TC=25nC
COLLECTOR CURRENT [C (A) f? M'
-1 69 r
s: *15 ‘L ,
m sys''' k o...-
to -M Q, V Js
0 "6“ ity/s
:2: cN t9 ts
E. -o.1 -
a x f)
hh "La:
:11 -aos, \ Em
C CURVES MUST BE _ o
o -DERATED LINEARLY 02
-WITH INCREASE IN- 'gi?
TEMPERATURE > N
_QolLuu ...LJ.. .n....
o -o.2 -ae -t16 -o.a -1.o -1;a -I.A -5 -10 ~30 -5o -1 -lNX0 -1000
BASE-EMITTER VOLTAGE VBE M COLLECTOR-EMP) V M
VOLTAGE CE
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