2SA965 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SA966 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SA968B ,Silicon PNP Power Transistors TO-220 packageFEATURES:. High Transition Frequency; fT=100MHz (Typ.). Complementary to 2SC2238BMAXIMUM RATINGS (T ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-922SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Ampli ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-92Applications Unit: mm Low noise : NF = 3dB (typ.) R = 100 Ω, V = −6 V, I = −100 µA, G CE C f ..
2SA970-BL , Low Noise Audio Amplifier Applications
2SC5437 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5437-T1 ,Reduced noise high frequency amplification transistorT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5440 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5440 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5440 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC5445 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SA965
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA965
2SA965
POWER AMPLIFIER APPLICATIONS Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS 5.IMAX.
0 Complementary to 2SC2235. g
0.75MAX.
1.0MAX, -
MAXIMUM RATINGS (Ta = 25°C) Q d
CHARACTERISTIC SYMBOL RATING UNIT E (i,
Collector-Base Voltage VCBO -120 V
Collector-Emi; Voltage VCEO -120 V .
Emitter-Base Voltage VEBO -5 V E
Collector Current 10 -800 mA T-'',' g
Emitter Current IE 800 mA Ci
Collector Power Dissipation PC 900 mW ; ElgiEE:OR
J unction Temperature Tj 150 "C 3. BASE
Storage Temperature Range Tstg -55-150 "C JEDEC T0-92MOD
JEITA -
TOSHIBA 2-5J1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight .. 0.36g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -120V, IE=O - - -100 nA
Emitter Cut-off Current IEBO VEB= -5V, IC--0 - - -100 nA
fier2,iitietu, V(BR)CEO Ic=-10mA,1B=0 -120 - - v
olte1tif,,da'atage V(BR)EB0 IE= -IrnA, IC=0 -5 - - V
DC Current Gain hFE VCE= -5V, IC-- -100mA 80 - 240
(Note)
21tatietiotarge VCE(sat) IC=-500mA,1B=-50mA - - -1.0 V
Base-Emitter Voltage VBE VCE= -5V, Ic= -500mA - - -1.0 V
Transition Frequency fT VCE-- -5V, IC-- -100mA - 120 - MHz
Collector Output Capacitance Cob VCB= -10V, IE=0, f=1MHz - - 40 pF
(Note) : hFE Classification
C) .' 80--160, Y : 120-240
2001 -1 0-29
TOSHIBA
IC - VCE
COMMON
2 EMITTER
E Ta=25°C
- -800
J.? -7
g -600 -5
pd -400 -3
g -200 IB---lmA
0 - 2 - 4 - 6 - 8 - 10 - l2 - l4
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON
EMITTER
IC /13 = 10
VCE(sat) (V)
Ta = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT 1C (mA)
COLLECTOR POWER DISSIPATION
PC (W)
0 20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
2SA965
hFE - IC
COMMON
J? 500 EMITTER
VCE---5V
E 300 Ta=100°C
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT IC (mA)
1C - VBE
2 -800
g COMMON
S? EMITTER
-600 V W
a E---
S -400 Ta=100°C 25
t -200
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-3000 III
- IC MAX.(PULSED))k. .. ..-
A , , V/ IrnskT.
< _1000=IC MAX.(CONTINUOUS) y , =
g x I IIIIH 'xh,'s 10mst
0 -500 _ I I I I l _
'-" -300 \\PC OPERATION l (10%in
5 100 ?lii,l 'tlr
n: X SINGLE
D -50 's
o -30 NONREPETITIVE '
g PULSE Ta=25°C 's l
'i -10 CURVES MUST BE
:3 -5 DERATED LINEARLY
8 -3 WITH INCREASE IN
TEMPERATURE.
0.5 -1 -3 -5 -10 -30-50 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA965
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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