2SA954 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTIC . TYP. MAX. UNIT
DC Current Gain
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2SA965 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SA966 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SA968B ,Silicon PNP Power Transistors TO-220 packageFEATURES:. High Transition Frequency; fT=100MHz (Typ.). Complementary to 2SC2238BMAXIMUM RATINGS (T ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-922SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Ampli ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-92Applications Unit: mm Low noise : NF = 3dB (typ.) R = 100 Ω, V = −6 V, I = −100 µA, G CE C f ..
2SC5435 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT KPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5435NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5435-T1 ,Reduced noise high frequency amplification transistorT KPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5435NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5436 ,NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT NPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORULTRA SUPE ..
2SC5436-T1 ,Reduced noise high frequency amplification transistorT NPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORULTRA SUPE ..
2SC5437 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5437-T1 ,Reduced noise high frequency amplification transistorT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SA954
