2SA949 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA952 ,PNP SILICON TRANSISTORPNP SILICON TRANSISTOR
2SAS52
DESCRIPTION The 2SA952 is designed for use in output stage of p ..
2SA953 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
TYP. M ..
2SA954 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTIC . TYP. MAX. UNIT
DC Current Gain
..
2SA965 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SA966 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5408 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5408-T1 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5409 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT97PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION O ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SA949
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS
TOSHIBA 2SA949
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA949
DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS Unit in mm
HIGH VOLTAGE SWITCHING APPLICATIONS 5.1MAX.
0 High Breakdown Voltage .' VCEO= -150V 3
0 Low Output Capacitance : C0b=5.0pF(Max.) 0.75MAX.
1.0MAX. -
0 High Transition Frequency : fT=120MHz(Typ.)
0.8MAX, , Q E
MAXIMUM RATINGS (Ta = 25°C) 3 Cf:)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -150 V " 2 3 i
Collector-Emi) Voltage VCEO -150 V g.
. _ ' _ Ct A
Emitter-Base Voltage VEBO -5 V (iiirr''ii,ii.
Collector Current 10 -50 mA l. EMITTER "'
Base Current IB 5 mA g. COSLLECTOR
. BA E
Collector Power Dissipation PC 800 mW
. JEDEC TO-92MOD
Junction Temperature Tj 150 "C JEITA
Storage Temperature Range Tstg -55--150 "C -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 150V, IE = 0 - - - 0.1 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 0.1 pA
. hFE - -
DC Current Gain (Note) VCE - - 5V, IC - - 10mA 70 - 240
Collector-Emitter - -
Saturation Voltage VCE(sat) IC - - lOmA, IB - - lmA - - - 0.8 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 30mA - - - 0.9 V
Transition Frequency fT VCE = - 30V, 10 = - 10mA - 120 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 4.0 5.0 pF
(Note) : hFE Classification O : 70--140, Y : 120-240
1 2001-10-29
TOSHIBA
10 (mA)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
C0 LLECTOR CURRENT IC
IC - VCE
COMMON
EMITTER
Ta = 25°C _ 500
IB---100PA
0 - 2 - 4 - 6 - 8 - 10 - 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
500 VCE = _ W
Ta = 100°C
100 25
-0.3-0.5 -1 -3 -5 -10
COLLECTOR CURRENT 10 (mA)
SAFE OPERATING AREA
-30 -50 -100
-300 l
IC MAX.(PULSED)ik. 100msX
-100 -
LIC MAX. "N
:(CONTINUOUS) 0.5 IT. \
-50 S \
-30 'sc,
DC OPERATION
Ta=25''C
-5 - .y.f SINGLE
- NONREPETITIVE PULSE
-3 - Ta=25°C
CURVES MUST BE
- DERATED LINEARLY WITH
INCREASE IN M AX
1 TEMPERATURE. VCEO .
-3 -5 -10 -30 -60 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 1C
COLLECTOREMITTER SATURATION
VOLTAGE vcmm (V)
COLLECTOR POWER DISSIPATION
2SA949
IC - VBE
COMMON
EMITTER
VCE = - 5V
Ta=100°C 25 -25
0 -0.2 -0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON
EMITTER
IC/IB = 10
-0.3-0.5 -1 -3 -5 -10 -30-50 -100
COLLECTOR CURRENT IC (mA)
PC - Ta
0 20 40 60 80 100 120 140 180
AMBIENT TEMPERATURE Ta (°C)
2001 -1 0-29
TOSHIBA 2SA949
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
:
www.loq.com
.
