2SA885 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca0.75±0.10.5±0.1Parameter Symbol Rating Unit0.5±0.1 1.76±0.14.6±0 ..
2SA893 , Silicon PNP Epitaxial
2SA893 , Silicon PNP Epitaxial
2SA9012 , 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH PULL OPERATION
2SA916 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 "C)
SYMBOL CHARACTERISTIC . . MAX. TEST CONDITIONS
DC Currenf ..
2SA921 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5370 , Silicon NPN Epitaxial Planar Transistor(Emergency Lighting Inverter and General Purpose)
2SC5374 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5383 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
2SC5386 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5387 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5388 ,High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA885
