2SA817A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA821 , PNP Plastic Encapsulated Transistor
2SA825 , 2SA785 2SA786 2SA825 2SA826
2SA825 , 2SA785 2SA786 2SA825 2SA826
2SA826 , 2SA785 2SA786 2SA825 2SA826
2SA830 , 2SA790 2SA791 2SA830 2SA831
2SC5345 ,Conductor Holdings Limited - Silicon Epitaxial Planar Transistor
2SC535 , Silicon NPN Epitaxial Planar
2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.APPLICATIONS FOR BATTERY CHARGER Unit in mmAND POWER SUPPLY80+02High Voltage :TTi oh RrwspdVCEO = 4 ..
2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.2SC5351HIGH SPEED SWITCHING
2SC5352 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHIN REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.APPLICATIONSExcellent Switching Times: tr = 0.5 ps (Max.), tf = 0.3 ps (Max.) (10 = 4A)High Collect ..
2SC5353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.2Excellent Switching Times: tr=0.7,us (Max.), tf=0.5,us (Max.)High ..
2SA817A
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS
TOSHIBA 2SA817A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA817A
DRIVER STAGE AMPLIFIER APPLICATIONS Unit in mm
VOLTAGE AMPLIFIER APPLICATIONS 5.1MAX.
0 Complementary to 2SC1627A. rj),.
0 Driver Stage Application of 30 to 35 Watts Amplifiers. 0.75MAX.
LOMAX. -
MAXIMUM RATINGS (Ta = 25°C) 0.8MAX, Q E
CHARACTERISTIC SYMBOL RATING UNIT E t',.s'i'r'
Collector-Base Voltage VCBO -80 V
Collector-Emi; Voltage VCEO -80 V .
Emitter-Base Voltage VEBO -5 V Ci,
Collector Current IC -400 mA T-s,' g
Emitter Current IE 400 mA Ci
Collector Power Dissipation PC 800 mW "2.' 'i'ljlT2'io,
J unction Temperature Tj 150 ''C 3. BASE
Storage Temperature Range Tstg -55-150 "C JEDEC T0-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 50V, IE = O - - - 100 nA
Emitter Cut-off Current IEBO VEB = - 5V, 10 = 0 - - - 100 nA
Collector-Emi; - -
Breakdown Voltage V(BR)CEO IC - -5rnA, 1B - O - 80 - - V
hFE(1)
V =-2V, I =-50mA 70 - 240
DC Current Gain (Note) CE C
hFE(2) VCE = - 2V, IC = - 200mA 40 - -
Collector-Emi;
Saturation Voltage VCE(sat) IC - - 200mA, 1B - - 20mA - - - 0.4 V
Base-Emitter Voltage VBE VCE = - 2V, IC = - 5mA - 0.55 - - 0.8 V
Transition Frequency fT VCE = - 10V, IC = - 10mA - 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = 1MHz - 14 - pF
(Note) : hFE (1) Classification 0 : '70--140, Y : 120--240
1 2001-10-29
TOSHIBA
2SA817A
IC - VCE
COMMON
- 280 . EMITTER
Ta = 25°C
10 (mA)
COLLECTOR CURRENT
0 -1 -2 -3 -4 -5 -6 -7 -8
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON
-0.5 EMITTER
IC /113 = 10
CE(sat) (V)
COLLECTOR—EMITTER SATURATION
VOLTAGE V
-1 -3 -10 -30 -100 -300
COLLECTOR CURRENT IC (mA)
PC - Ta
Ba? 's,
t; 's,
:3 0.4 'ss
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
hFE - IC
COMMON
EMITTER
J? 500 VCE---2V
300 Ta=100°C
'i-ii, 25
E 100 -25
-1 -3 -10 -30 -100 -300
COLLECTOR CURRENT 10 (mA)
IC - VBE
g -300
Q COMMON
- EMITTER
J? -250 VCE---2V
; -200
g -150
g -100
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
(ll IIHII llllll
10msy.t.
-1000-IC MAX.(PULSED)).k. I I Irt -
- I .'. -
:10 MAX. \ "s ' _ Irnsyd. -
-500 '(CONTINUOUS) Nc . N
2 -300 , ,
g 100ms)k. 't
S' ss 'ss
- 100 ___DC OPERATION
E EE (Ta=25°C)
ttt -50
Q -30 ,
rd -10
8 X SINGLE NONREPETITIVE
-5 PULSE Ta=25°C
-3 CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
-0.5 -1 -3 -10 -30 -100
COLLECTOR EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA817A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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