2SA814 ,SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)TOSHIBA 4H)TSCeliyl'C/()P'l'01 Sr, DEIHDHHW admaaa l: r56C 07236 o"rCrrru/ySILICON PNP EPITAXIAL BA ..
2SA817 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Ampli ..
2SA817 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier ApplicationsApplications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio am ..
2SA817A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA821 , PNP Plastic Encapsulated Transistor
2SA825 , 2SA785 2SA786 2SA825 2SA826
2SC5344SF , NPN Silicon Transistor (Audio power amplifier application)
2SC5345 ,Conductor Holdings Limited - Silicon Epitaxial Planar Transistor
2SC535 , Silicon NPN Epitaxial Planar
2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.APPLICATIONS FOR BATTERY CHARGER Unit in mmAND POWER SUPPLY80+02High Voltage :TTi oh RrwspdVCEO = 4 ..
2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.2SC5351HIGH SPEED SWITCHING
2SC5352 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHIN REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.APPLICATIONSExcellent Switching Times: tr = 0.5 ps (Max.), tf = 0.3 ps (Max.) (10 = 4A)High Collect ..
2SA814
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
TOSHIBA 4H)ISCRETE:/'0PT01
901197250 TOSHIBA wrscarrE/oFrros'
28A814
ZSA815 'Wea?..
56C 07236
SILICON PNP EPITAXIAL BASE MESA TYPE
Unit in mm
Si, DE|]=10=17250 0007230 I: T
si-ar-r-rt-s-Tut-f
MEDIUM POWER AMPLIFIER APPLICATIONS. 16.3w. Aaasso.ss
DRIVER STAGE AMPLIFIER APPLICATIONS. f . (fr?
.-.' .. ..._I_ ', . "'. r . " t't .'' -
5 v" - t 3
FEATURES: A _ _ E . 5; I
. High Breakdown Voltagea VCEo=-l-20V (2SA814) . H ,-i, I
' VCEO=-100V (2SA815) ir--. f" I . 1
vi . ' ' E
. Complimentary to 2301624 and 2$Cl625. _ ' E
- . . . . v . . _ 5 3 _
0.75 r4
MAXIMUM RATINGS (Ta=és°c$ & . B.ti1 3dih t .
--taiittAcTmtIsrrc SYMBOL RATING UNIT. _ a g f Io'' f]
collector-masse 2Sh814 VCBO -120 ll I: ----- 4 to.
Voltage 2SA815 -1oo '.re ' . ' N
. . h. BASE
co11ectob-Emttter 2SA814 VCEo .-120 V a, COLLECTOR (HEAT SINK)
Voltage 25A815 -1oo ' EMITTER
Endtter-Base Voltage VEBO -5 _ 'V JEDEG TtritDAB
Collector Current 'rc -1 “L A -EIAJ; tH3-$6
Emitter Current IE 1 - A r TOSHIBA B-ioATA
Collector Power - _ . ' M5untihg-Kit tio.. A075
Diss1pat:1ou-' (Tc 25 C) .Pc 15 w Weight t l..9g .
Junction Temperature Td 150 t "e. "- ‘f
Storage Temperature Range Tstg -55~150 "e . _
ELECTRICAL CHARACTERISTICS (Ta=25°C) . . lf' _ , , .
CHARACTERISTIC SYMBOL TEST cotiiotrtoN, MIN. TYP. MAX. UNIT
Collector Cut-off Current Icno 1layx-50W, trr-sp). - - -1.0 "
Emitter Cut-off Current IEBO VEB=-5V,I Id=bj-"’_ " - -1.0 ph
Co11eetor-%dt:t:ar 2SA814 L _0"120 - - '
Breakdown Voltage 2SA815 V(BR)CE0 Icu'lém” 130-100 - - V
Emitter-Base' J. = . ..._ _ I
Breakdown Voltage V(BE)EBO trr-uid", Icu0 _ _ -.5 - - V I
hFE(1) =... ' e =- - i
DC Current Gaih (Note) VCE SV’AIC- 150mA 70 240
. hum) . vcE--5v, Ity=-500mA 4o - -
collector-Emitter .
Saturation Voltage VCE(Bat) xIca-SOOmA, IB=_50mA - - -0.5
Base-Etateter Voltage V1313 1ltyr-51l, Ic=-500mA - - -1.0
Transition Frequency f-r VCBr-'-5V, Ic=-150mA 10 30 - MHz
Collectdr Output Capacitance Cob VcBs=-10v,jva0,f=ItfRz - 30 - pF
Note: hFE(1) Classification 0 t 7tyu140, Y , 1200240
TOSHIBA CORPORATION "llllllllIlllllllHllllllllmflllllHllIIHlUllIIIIIHIIllllllIlHHIlllllllllllllHllIIHIIIIIKIIIIIHIIIIHIHIHIIIIllllIIllllllllllllllll||IIHIIKIIlIIHIIIIHIIIIHIIIlllm|||lllIlllllllllllIllllllllflllllllllll
PROBLEM HARD COPY
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA II)ISCRETE/()PT0y Si, DEDHEIWEEU Dumas? a [I
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9097250 TOSHIBA (DISCRETE/OPTO) ."ii'i.ri':, ",':i.i,j.r.),e.,'.'.3v,:r, c1Tr:ii's.iili:t/.n
COLLECTOR CURRENT
e, tl.
MH‘S-us
.' rata
A" ”.19,”
Aeat _'i,:','._,'iii'is''i'iiiii' 'ii) ZSA815
, 0 OE " "ii"'"'
common V common
EMITTER .'. EMITTER
'l‘c=25'c H BOO v0E=-5v
th' 'it -tray
. _. P .
- g.--300
|-'l .-
“O. . ,
"ye _ y -8 TB -10 '12 -u Po .-tMt -ad -0.6 -0.8 ~10
COLLECTOR-EMITTER VOLTAGE Veg M _ BASE-EMITTER VOLTAGE
. r . VBE M
htrig - Io .. ' ,
COMMON EMITTER
Irrm = -61t BABE OPERATING AREA
E .)k. swam: tl0tWBPl!tTITIvti1
- . P E - .
A _5D_ .. JULI E 'P"" MT
eg . : I {IHF
10* 10“ MIX '(PUIBE’D)X
. Ela' -1.0
'tet .
..-.ti ~10 .40 _ -100 -3X; 5-1000 ~aooo E 0.5
COLLECTOR CURRENT Its Cum).- P p _'
_ o _-0.3
_ - V03 tsat) - lo g n \\ ,
3.. ~0URVES MUST BE \ x _
COMMON 3 'OJEDERATED LINEARLY l h tt
_ . -WITH INCREASE N
F21 - N
EMITTER o . titm ", IN TEMPERATURE ii'')
Ic/IB==10 0 ". . . "d
_ . _10.05-. VGEO MAX =100V_ u- Iii
231mm 2
' ' Em
w'-0.01 P
rls --5 -20 -ao -5_o -aoo -ax1 -500
IGOLLEOTOR-EMITTER VOLTAGE
‘ . . ' -. Von: M
-5 ~10 -30 -to 100 r300 -1000 m f
COLLECTOR CURRENT 10 (mA)
lml|lillIIllllllllllllllllllmllllllllllllll|HIllllllllllllll|llllllllllllIllllllllllllllll|lllllllllllllHllIIlllllllllllllflmIHIIIIIIIIIIHI||IllllllIllIIIIHIIIHII||lIlllillllllIHIIIIIIHIIHIIllllll|llllllllTOSHIBA CORPORATION
This Material Copyrighted By Its Respective Manufacturer
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