2SA733 ,PNP General Purpose AmplifierFeatures• This device is designed for general purpose amplifier
2SA733/JM ,Silicon transistorDATA SHEETPNP SILICON TRANSISTOR2SA733PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING (U ..
2SA733-K ,PNP SILICON TRANSISTORFEATURES 0 High hFE and Excellent Linearity : 200 TYP. 5.2 MAX.
(o.204 MAX.)
hFE (VCE =‘6.0 V, ..
2SA733P ,PNP transistor for use in driver of AF amplifier, 60V, 0.1A
2SA733-P ,PNP transistor for use in driver of AF amplifier, 60V, 0.1A
2SA733-P ,PNP transistor for use in driver of AF amplifier, 60V, 0.1A
2SC5251 , Silicon NPN Triple Diffused Planar
2SC5255 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = ..
2SC5265 ,Inverter-controlled Lighting ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage VCBO 1200 VCollector-to-Emitter ..
2SC5270A ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5271 , Silicon NPN Triple Diffused Planar Transistor(Resonant Switching Regulator and General Purpose)
2SC5271 , Silicon NPN Triple Diffused Planar Transistor(Resonant Switching Regulator and General Purpose)
2SA733
PNP General Purpose Amplifier
2SA733 — PNP General Purpose Amplifier September 2009 2SA733 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5.0 V EBO I Collector current - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA © 2009 2SA733 Rev. A0 1
