2SA510 ,SILICON PNP EPITAXIAL TYPETOSHIBA 4H)TSCRETE/()PT()1.9097250 TOSHIBA (DISCRETE IOPTO)HIGH FREQUENCY AMPLIFIER
2SA510 ,SILICON PNP EPITAXIAL TYPEFEATURES.. .. High Breakdown Voltage ' VcEty---1001l (2SA510), VcEtr-s-60V. Various Uses for Medium ..
2SA512 ,SILICON PNP EPITAXIAL TYPEAPPLICATIONSUnit in mmg5939MAX.MAXIMUM RATINGS _ (Ta=25°C)CHARACTERISTICl - v l ZSASIOCol ector Bas ..
2SA539-Y , LOW FREQUENCY AMPLIFIER
2SA539-Y , LOW FREQUENCY AMPLIFIER
2SA561 , PNP SILICON TRANSISTOR
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5171. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fT=200MHz (Typ.)O Complementary to 2 ..
2SC5172 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS li=tUsiiri-,,r-, 1;?Excellent Switching Times: tr=0.5,us (Max.), tf=0.3,us (Max.) at 1 ..
2SC5174 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5174. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA510-2SA512
SILICON PNP EPITAXIAL TYPE
TOSHIBA {DISCRETE/OPTO}
Si, DEUHD‘I'E'SU 0130?an Cl il
" 2SM10
”.ZSA512.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
REGULATOR APPLICATIONS.
FEATURES.. .
. High Breakdown Voltage ,
'. VcE0s-60V
. 1lar1ous Uses for Medium Power
t IC=-1.5A (Max.), PC=800mw (Max.)
9097250 TOSHIBA tDISi2RETE/OPTO)
VCEo=-100V (25A510)
(ZSASIZ)
565 07224 01-37-15
INDUSTRIAL APPLICATIONS
Unit in mm
¢989MAX.
t-''",su"'dt
lQOMIN. 65MAX.
. Complementary to 236510 and 236512.
MAXIMUM RATINGS - (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
- 2SA510 -a20
Collector Base Voltage 2SA512 VCBO -.80 V
Collector-Emitter 2SA510 ll -100 V
Voltage 25A512 CEO -60 1 T
- - .EMI TBR
Emitter Base Voltage VEBO 5 v 2.BASE
Collector Current 10 -1.5 A s. COLLECTOR (CASE)
Base Current: In -300 mA JEDEC, TO-GS?
Collector Ta=25°C Pc 800 mw EIAJ TC-6,TB-5B
Power Dissipation Tc=25°c -8 w
Junction Temperature 'rd 175 "C TOSHIBA 2--BBhk
Storage Temperature Range Tstg -65'u175 ”C Height 1 l.13g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP MAX. UNIT
Collector Cut-off Current ICBO IrcB---30v, IE=0 - - -1.0 ph
I Emitter Cut-off Current amso VEB=-5V, Ic=0 - - .-5.o uA
11F 1 - -
DC Current Gain RCS,), VCE--2V. Ics---200mA 30 - 150
hFE(2) 1lcE=-5ir, Ic----" 15 - -
Co11eetor-Emttter
..---2 =-2 - - .3 -O.6 V
Saturation Voltage VCE(sat) IC OOmA, IB OmA 0
Base-Emitter I‘=-2o I =-2 - ...0.85 -1.0 v
Saturation Voltage vBE(sat) C OmA, B OmA
Transition Frequency fT vcly=-10v, Ic---30mh 20 60 -. MHz
Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHz - 43 50 pF
Switching .Turn-on Time ton INPUT1kn OUT UT - 0.1 -
. Storage Time tstg -et,tot,' 2d - 2.0 - us
Time UTY H 2
Fall Time tf "YeusSaihvm3s-'-w Vac=~4ov - o. -
Note t hFE(1) Classification R t 30'u90, 0 I 50N150
TaBHmuxCORPORANDNmmmmmmmmwmmmwwmmwmmwmmmmmmmwmmmwmmmwmmmmmmmmmwmmm
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4H)ISCRCTE/0PT01 Si, os:l)cuocri'asn ClrlCr?iiliilS l T
07225 trr-at-ttr
2Sh510o2Sh512
9097250 TOSHIBA (DISCRETE/OPTO) 3bt
SWITCHING CHARACTERISTICS
3000 IC - VCE
tetg v
co ON E ITT R
I 1000 o MM , M E
H Tc = 25’c
! 5.1 g
H 100 g -20
g l" -10
g VCG=_4°V g IB=~5mA
y, Io -----axhaA g o
I = 3111A
t B2 . o -1 -2 --G -l --ts --6 --:
Tto--atro COLLECTOR EMITTER vommi. ng (w
.-1 --a --5 --1o ~30 -50 -100 -mo
BASE CURRENT 131 (um)
Ic _ VCE
Ic - VCE A
n ci. common EMITTER
V COMMON J? Ic=c-titi'C
J? EMIT'NgR
To = 100'c a
SFS' E --eo
- .5 ta
o g --ao
M a -20
, .:4 IB = -10mA
'tal-aes 3
. 0 o o --1 - --a -i -5 -6 -'Y
o --1 -2 -3 -1 -5 -6 -"7 c0LLECTOR-BMiTTBR VOLTAGE Irus. M
Ct3LLWT0B-liM1TTER VOLTAGE v03 M 8
VCE(sat) - Io
hFE - IO G" -5
3 --a COMMON EMITTER
common EMITTER >0 Ic/IB=10
M VCE = --2V WI
si? 23 e, -I
.. H .4
C. H o -O,5
< a ts
e, , a -O,3
Fe O H
tp ,4 -0.1
U Ct tl,
C9 O U)
a 41.05
--l5 -10 --eo --100 -200 --1030 -e000
-G -20 -20 --100 .-GOO -1000 COLLECTOR CURRENT rc (m)
COLLECTOR CURRENT IO (M)
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- 153 -
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA II)ISCRETE/0PT01 Si, 1yE:iyuvrizsfioiriFiiric 3 H
9097250 TOSHIBA (DISCRETE/OPTO) ---- 50C -OTif2ef . DT-3i7..',5
28A51 D-ZSA512
VBE(sat) - Io Cib,cob - VR
--3 COMMON EMITTER
IC / As = 10
Ta: 25'0
SATURATION VOLTAGE Vans“) (v)
EMITTER 1mm CAPACITANCE c“, (p?)
comm otrmrr CAPACITANCE cob (pF)
E -0,5
g -O.I 1
-O.05 5
--a -10 ._.m -100 --200 --1000 -3000 0.1 0-3 0.5 1 G 6 10 30 50
COLLECTOR CURRENT IO (M) REVERSE VOLTAGE VR (V)
PC - Ta
I CD Tc = Ta
t, a "i" (INFINITE HEAT SINK)
o \ t''t. zooxzomzzmmm' HEAT SINK
a. 7 \ (USING RH-IO)
\ .3 100x1oox2mm Ag HEAT '"'"f
'd l (usxxo RH-lo)
E: 6 fi, 50x50x2mm At HEAT SINK
il' ' \ (usxxa RH-IO)
Z,’ 5 3 Ct NO HEAT SINK
ai, "s (Note) Unit; mounted on Ag
f] l N, ,) heat sink with
g \ silicone greace to
M T _ keep contact thermal
's?,. N, \{esistance small.
1 5 . h
_ 'N. \
o " 80 120 160 200 240 280
AMBIENT TEMPERATURE To. Cc)
TOSHIBA CORPORATION lllIlIllIllllllllllllllllIlllIlllllllllllllllmlllllll||Illl|IllllllllllIllllllllllllllIHIIllHlllllll|lllll|llllllllIIllIIIIIlllIlllnlIllllllllIIlllll|lllllIllllIlllllIllIllllllHIlIlHIllIIllllllllllllullllnllllll
This Material Copyrighted By Its Respective Manufacturer
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