2SA498 ,PNP transistor for medium power amplifier applicationsApplications.. EWE'G'? V CED = -80V 2SA497 919:3“1rcEo----50V 2SA498 'ii- "CU. magma» VCE(sat)= --0 ..
2SA504 ,Conductor Products, Inc. - SILICON PNP EPITAXIAL
2SA510 ,SILICON PNP EPITAXIAL TYPETOSHIBA 4H)TSCRETE/()PT()1.9097250 TOSHIBA (DISCRETE IOPTO)HIGH FREQUENCY AMPLIFIER
2SA510 ,SILICON PNP EPITAXIAL TYPEFEATURES.. .. High Breakdown Voltage ' VcEty---1001l (2SA510), VcEtr-s-60V. Various Uses for Medium ..
2SA512 ,SILICON PNP EPITAXIAL TYPEAPPLICATIONSUnit in mmg5939MAX.MAXIMUM RATINGS _ (Ta=25°C)CHARACTERISTICl - v l ZSASIOCol ector Bas ..
2SA539-Y , LOW FREQUENCY AMPLIFIER
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC5150HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "r"Tf'tf't wr O . O 9 L0 -lnlgn voltage ..
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SC5161 TL B , High voltage switching transistor (400V, 2A)
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SA498
PNP transistor for medium power amplifier applications
9'} :a>PNPcce3r:tsi,rr7 IL??? #599257 (PCThrct)
SILICON PNP EPITAXIAL TRANSISTOR (HT PROCESS)
ZSA497, 23A498
Ortuithttltitim
C) Medium Power Amplifier Applications.
‘EWETT
. fit8mtfEiy'xiEi,x
cho = -80V 2SA497
ch = -50V 2SA498
ch(sat)= --0.12VCryp0
025C497, 2SC498 k CT 77° y A V57 9 tcts , iT.
. Complementary to
280497 and 2SC498
'k:kytt(ti MAXIMUM RATINGS (Ta=25°C)
Unit in mm
9=19_dMax
I[:3.:|5¢-
I I 1 2 I:
I ‘Fig
"I 0.15452
Characteristic I Symbol I Rating Unit
2SA497 --80
31/75 .-s'-N'aT4tlE ------_ Vcno V
2SA498 -50
C2 1/7 ' . = 5 bv Maggi; 2SA497 VCEO -80 V l.' EXISETER
2SA498 -50 3. COLLECTOR (CASE)
JE. t" V ' . ws'-. XFBEIEHE I Van -5 V JEDEC T0-39
C2 1/9 53;. c, lo -800 mA EIAJ T05. TB-SB
= 5 y 'tltiE IE 800 mA TOSHIBA 2-8J
CT V , ' gHe PC 600 mW
#?ttiflgt To 150 ''C
#fiiir1lm I Tsr. I -(irs-150 ''C
ttrr-tttttttii ELECTRICAL CHARACTERISTICS (Ta:25° C)
Characteristic I Symbol I Condition I Min. Typ. Max. Unit
a w a ”mam I Icrso LycB=z--30V, IE=0 - - 1 0 "A
sci y ' L, tltrtltitf. I IEBO 1%sr---5V, Ic=0 - -- 1 0 pA
21/75! .crui vJri'41 2SA497 -- - -80 --- -
B&HE'EH: -2EiGi- V(BR)CEO Ic.--- lOmA, IBu-c0 --50 - - V
csi y ' . -1-szslWs'dfE V(BR)EB0 IE------), Ic=0 --5 - -
(NOTE) V 2V I - 200mA
_ - =- , _-- 40 - 240
mamas hra<1> CE - C' _._
hrs(2) I 1rcE--s--2V, Ic=-800mA 13 - -
C2 1/7 a . = i 'Y jrrreuiintyrii'.fE ch(sat) lc---irnA, h,-----?; - -0.12 -0.8 V
/<-7K . = S y 'f'attrtmtrE VBE(Sat) 1c=--200mA, hs-----' - --0.9 --1.2 V
F , V y; ' a v'MiASt f, vcs--c-10V, IE=IOmA - 70 - MHz
C2 1/7 MUJEE Cu, I VcB----10v, IE=0, f=1MHz - 33 - pF
Note .. hm (m: J: D T3520 J: 5 K6??? u, gui'a6ijiU"'C
According to the value of hn;(1), the 2SA497
and 2SA498 are classified as follows.
Classification Min . M a x.
53233 40 80
53213258 70 140
s'fst4ir7CY, 120 240
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