2SA496 ,SILICON PNP EPITAXIAL TYPE(PCT PROCESS)TOSHIBA fI)ISCRETE/0pT01 SE I) I 9097250 UDU?ELH i, Iq. /56C 07219 D Tlraf?-2:s9097250 TOSHIBA {DIS ..
2SA498 ,PNP transistor for medium power amplifier applicationsApplications.. EWE'G'? V CED = -80V 2SA497 919:3“1rcEo----50V 2SA498 'ii- "CU. magma» VCE(sat)= --0 ..
2SA504 ,Conductor Products, Inc. - SILICON PNP EPITAXIAL
2SA510 ,SILICON PNP EPITAXIAL TYPETOSHIBA 4H)TSCRETE/()PT()1.9097250 TOSHIBA (DISCRETE IOPTO)HIGH FREQUENCY AMPLIFIER
2SA510 ,SILICON PNP EPITAXIAL TYPEFEATURES.. .. High Breakdown Voltage ' VcEty---1001l (2SA510), VcEtr-s-60V. Various Uses for Medium ..
2SA512 ,SILICON PNP EPITAXIAL TYPEAPPLICATIONSUnit in mmg5939MAX.MAXIMUM RATINGS _ (Ta=25°C)CHARACTERISTICl - v l ZSASIOCol ector Bas ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC51487QCE1ARHORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEE ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SC5149 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m+r g, o g;ui,1't,O
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC5150HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "r"Tf'tf't wr O . O 9 L0 -lnlgn voltage ..
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SA496
SILICON PNP EPITAXIAL TYPE(PCT PROCESS)
TOSHIBA II)ISCRETE/()pT01 Si:, I) [lruvr?iesin 000721.51 I: [I
-r-==e!?l?F"
9097250 TOSHIBA (DISCRETEIOPTO) 56C 07219 T''j''"t-i 23
==28A496===
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
ZSASIS-
Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS. 'r.9MAX,
FEATURES: . - . _ OK 1.3 Ais.1:eo.1e.
Low Collector Saturation Voltage t, F/fi"
' vcsosat)"'-0.32V (Typ.) . t L/c
. Complementary to 250495 and 250496. .
12-0MAX.
MAXIMUM RATINGS (Ta---25''C) y,
CHARACTERISTIC SYMBOL RATING UNIT -
Collector-Base ZSASOS VCBO ~60 ll
Voltage 2SA496 -40 E 2.3 J 2.3 ti'
sc/glue/pr-E'"'"'" ZSASOS VCEO -50 v l-c-el--.-.!']
o ta e
g 2Sh496 -30 1. EMITTER 5,
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR-(HEAT SINK)
Collector Current IC -1 A 3' BASE
Emitter Current IE 1 A JEDEC T0 - 126
Collector Power Dissipation PC 1 ll BIAif _
o TOSHIBA 2 - 8ti' 1A
Junction Temperature T3 150 C Mounting Kit No. AC46C
Storage Temperature Range Tstg -55N150 "c Height t 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO Vays-30V, IE=0 - - -1 PA
Emitter Cut-off Current IEBO VEB=-SV, Ic=0 - - -1 "
Collector~Emitter ZSASOS =- " -50 - -
Breakdown Voltage 2SA496 V(BR)CE0 IC lOmA, IB 0 -30 -.. - V
Emitter-Base Breakdown Voltage V(BR) EBO IE=1mA, IC=0 -S - - V
(Note ll - 2v 1
-- tya-Math 40 - 240
DC Current Gain hFEu; CE ,
hFE(2) ircrr-2il, Ic=--800mA 13 - -
Collector-Emitter Saturation VCE(sat) Ic=-500mA, IB----50mgt - -0.32 -0.8 V
Voltage
Base-Emitter Voltage 11BE var---2v, Icxs-500mh - - ...1.3 ll
Transition Frequency fT VCE=-10V, 1ty'-10trtA 50 100 - MHz
Collector Output Capacitance Cob Var-lov, IE=0, f=1MHZ - 20 - PF
Note: hFE(l) Classification R t 40N80 0 t 70’\2140. Y ' 120N240
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA CIyISCRETE/0pT01 5031] 0007250 0007220
9097250 TOSHIBA trorsciRETE/OPTO) -irerc 07220 otaerpa
28A496°2$A505
Ic - VCE hFE - Io
C OMMON
EMITTER 100
Te = 2 6 'C
Ic (M)
COMMON EMITTBR
v08 =--2v , Tc=25'c
DC CURRENT (MIN
COLLECTOR CURRENT
12s --6 ~10 --ar- - -NXY -
-aoo COLLECTOR GURRENT lo (mA)
10 - V00
00 l 2 o fi --800
- - -G -1 --6 V
t90i,LEt7Ttut-RMITTl!IR VOLTAGE V02: (v) cowou MINER
J? --600 1rcB=-21r
vCE(aat) - IC (4 Tc=25lc
w, -1 a
E; COMMON EMITTER ti -400
g v 10/15: 10 3
i?, j; Te=26'C n:
g , [P,
V o --mo
n: r21 y
5.. -0. 0
d; o - -
ri?rt,o BASE-EMITTER VOLTAGE VBE (v)
:3: SAFE OPERATING AREA
oo --G
ot'-o.ol c MAx.0'tusED" o l
-:5 -5 -10 --ao --tio -100 ~soo --1000 V
COLLECTOR CURRENT rc (M) Io MAX.
_ (CONTINUOUS)
- 'r PC - Ta Ci.i. 's, E
g c. T0=Tn -O.5 _-.
Z INFINITE HEAT SINK J? . l -
Mt e © lOOXloolemAt 73: oh -
b, A HEAT SINK --O,G '5 u
a: ,?.5, " (G vox-zoxmm/sc F. tiittt,
p, 0 HEAT SINK ih
cm. a G ?ggoxmme g + SINGLE ' o. "
u: l 2, C) '/gtfssy1Y, Ag ts - ( NONREPETITIVE N
m m o -O,1 PULSE Tc=25'C i,
t (3 x \ HEAT SINK E N _ .
it, Ul "s, _ I C0 25X25X1mmA6 g "s
m ss 's, HEAT SINK H - CURVES MU T h
co "s, Q)NO --0,0ti- 5 BE
2 S? i'; 's x 's HEAT SINK e - DERATED LINEARLY o
o "s, "s.. sd"s. 'a -O.03- WITH INCREASE IN yiNs, g
tl 1 (.3 \\\.\ is_e 3 . TEMPERATURE g 'i, >
g "--~ "ss.,, _ ' - _.--- g N ‘n
. 4 C)
J 0 d a g
o 20 " 60 so 100 120 140 160 130 4,01...” 1 ....1.. gg $
AMBIENT TEMPERATURE Ta ('0) -0.ts --1 --a --5 --10 ~00 --ti0-"70
COLLECTOR-EMITTER VOLTAGE vCE (v)
TOSHIBA CORPORATION IIIIllllIllllIIIllllIllllllllllllllllllllllllllllIllllllllllllllllllllllllllllllllllllllIlllllllllllIllllllllllIllulllllllllllllllllllllllllIlllllllllllllIlllll|llll|lll|lllIllllllllllllmlllllllllllllllllllllllulllll
This Material Copyrighted By Its Respective Manufacturer
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