2SA490 ,Silicon PNP Power Transistors TO-220 packageTOSHIBA {DISCRETE/OPTO} Sl, J)lcllll''uvri'i?slo 0007211? i? r- -----9097250 TosruiiI {DISCRETE/OPT ..
2SA490 ,Silicon PNP Power Transistors TO-220 packageApplications.MAXIMUM RATINGS (Ta---25''c)CHARACTERISTICCollector-Base Voltage. L130 MIN. L4.7 MAXCo ..
2SA495 ,Conductor Products, Inc. - SILICON PNP EPITAXIAL
2SA495 ,Conductor Products, Inc. - SILICON PNP EPITAXIAL
2SA496 ,SILICON PNP EPITAXIAL TYPE(PCT PROCESS)TOSHIBA fI)ISCRETE/0pT01 SE I) I 9097250 UDU?ELH i, Iq. /56C 07219 D Tlraf?-2:s9097250 TOSHIBA {DIS ..
2SA498 ,PNP transistor for medium power amplifier applicationsApplications.. EWE'G'? V CED = -80V 2SA497 919:3“1rcEo----50V 2SA498 'ii- "CU. magma» VCE(sat)= --0 ..
2SC5143 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m_+_r all CY gl, ELc,High Voltage : VCBO = 1700VLow Saturation Voltage : VCE (sat) = 3 ..
2SC5144 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _o.Eil-iii'- TT'1 (N T 1 'Nee Im x . A L?. nlgn wpeeu : tf = 0.10 ps ..
2SC5145 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n C13 22:Collector3:EmitterParameter Symbol Ratings UnitN Type P ..
2SC5147 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC51487QCE1ARHORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEE ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SA490
Silicon PNP Power Transistors TO-220 package
0 HIBA {DI -
T S SCRETE/0PT0y Si, DEUEID'TPESU 000731;? i? I
- -----
I 9097250 TOSHIBA (irriE"iurrs/rdi:,To, 5trC 07217 Sy-tei-tct
SILICON PNP TRIPLE DIFFUSED TYPE 2Sh490
Unit in mm
IOSMAX fRsmeaa
POWER AMPLIFIER APPLICATIONS. T? 31$
J t. 3
FEATURES: m
. Cémplementhry to 2SC790. H
10 Watts Output Applications. E i .
a , 'l-l,
I.5MAX. g
MAXIMUM RATINGS (Ta=25°C) G'ir6 _
CHARACTERISTIC SYMBOL RATING UNIT 3
2.54 2.54 tt
Collector-Base Voltage VCBO ~50 V g 'f;. ll,
Collector-Emu; Voltage VCEO ~40 V H ---L..es:s. -
Emitter-Base Voltage VEBo -5 v 3
Collector Current Ic -3 A L BASE
Emitter Curreht I 3 A a COLLECTOR (HEAT SINK)
E J. EMITTER
Collector Power Dissipa-
tion (Tc=25°C) PC 25 w JEDEC T0-iAB
Junction Temperature Td 150 "c EIAJ 50-46
Storage Temperature Range Tstg -55m150 "c TOSHIBA 2-10A1A
Mounting Kit No. A675
Weight l 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBo VCB=-30V, IE=0 - - -10 uA
Emitter Cut-off Current IEBO VEB=-5V, Ic=0 - - -100 HA
Collector-Emitter
Breakdown Voltage V(BR)CE0 IC_-50mA’ IB=0 -40 - - ll
Emitter-Base
Breakdown Voltage V(BR)EBO IE---10mh, IC=0 -5 - - ll
(Ngti) 1lcE----2ll, Ttr---0.5lt " - 240
DC Current Gain .
. hFE(2) VCEE-ZV, Jtr-'-2A 13 50 -
Co11ectorrEmitter
Saturation Voltage VCEtsat) rc=-2A, IB---0.2A - -0.45 -1.2 v
Base-Emitter Voltage VBE VcE=-2V, Ic=-2A - -0.85 -l.8 V
Transition Frequency fT VCE=-2V, ic----(.5A 3 10 - MHz
Collector Output -
Capacitance Cob VCB=s-10V,iE=0,f--1MHz - 150 - pF
Note t hFE(l) Classification R ' 4ONBO 0 l 70m140 Y I 120N240
mmmmmmmmmmmmmmmmmmmwmmmmmmmmmmmmmmmmmmmmmmmmTDmflaACORPORAHDN
I --145-
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4:1yiSCREyI'E/0P'l'01 Sl, DEUHD‘WE‘SU UDD?ELB H ff
“fl -Nel=M- t'
9097250 TOSH IBA {DI SCRETE IOPTO) tioC 07 2 L 8 or-aa -I q
1c - VCE
3 common a
O EMITTER ,
a - e,
m g COMMON EMITTER
H o vos = - 2V
'tal n
'd -20 -130 -TOO -200 -1000 -GtXK;
o COLLECTOR CURRENT lo (mA)
o lo - VBE
o " -a -o -* " -6 -100
00LtHgoToR-RMITTEm VOLTAGE r~ COMMON
v I VCE (r) g g -80 EMITTER
_ til - _
m cE(sat) tl g J? vi-' av
moE COMMON EMITTER =
M < A C9 -60
ic,'; 't Ic/IB=1O
H o m m
N > V o
a a E" -10
I = co
as o > a
. g t 'd .-2
I M M U
t A to
o m o -0.2 -0.1 -0.6 -0.8 -1.0 -a.2
-10 -30 -100 -mn -1000 - BASE-EMITTER VOLTAGE VBE w)
OOLLEO'NR CURRENT " (M) SAFE OPERATING AREA
"10 I l I l I II‘r
Po Ta F, ,10 “(PULSED ~24)
5 - l I-III)),
E Ta''ra H s_lcuAk. I ill)') .
o 2 INFINITE H -3 (GONTJNUOUS) ."
m HEAT 8 1 NK z a?N ,
m 2 g %§@ on l
m o 52V
3 I Wy,
oz " . ‘LI C30; ,
15 m XSINOLE . W \
mg g - - NONREPETITIVE x-s-
gt a 4,5 . PULSED Tc=25'c
“:10 a 'CURVES MUST BB N .
S; g -t1ar.DERATED LINEARLY g
Am ti 0 WITH INCREASE IN
RH -TBMPERATURE
8 ca . 8
l, 25 BO Tti 100 m l ILIIIHI :
ym Tt50 art, -1 -a -5 -10 ~30 ~50 -1oo
AMBIENT TEMPERATURE Ta w) CoLLBtITort-EMiTimt VOLTAGE
TOSHIBA t:2taAtatar0Vrgt3N |llmlllllllllllll|lllllIllullllllll|IlllllllllllInllllllll|Illllllfll||Illllllllllllllll|lllllllmlllmlllllllllllllllllllllllll|IIll!lllllflllmlIIIlilIlllllllllllllIHlIIIllll|llllllIlullllllIllllllllllllllllll
- 146 -
This Material Copyrighted By Its Respective Manufacturer
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