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2SA2214TOSHIBAN/a153000avaiTransistor for low frequency small-signal amplification
2SA2214 TOSHIBA N/a3000avaiTransistor for low frequency small-signal amplification


2SA2214 ,Transistor for low frequency small-signal amplificationAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V−20 ..
2SA2214 ,Transistor for low frequency small-signal amplificationElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
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2SA2214
Transistor for low frequency small-signal amplification
2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2214

High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications High DC current gain: hFE = 200 to 500 (IC = −1.5 A) Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note 1: Mounted on ceramic board.(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 6.6 mg (typ.)
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