2SA2184 ,Power transistor for high-speed switching applicationsElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA2214 ,Transistor for low frequency small-signal amplificationAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V−20 ..
2SA2214 ,Transistor for low frequency small-signal amplificationElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA473 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SA473 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SA473 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SA2184
Power transistor for high-speed switching applications
2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2184 High Voltage Switching Applications High voltage: VCEO = −550 V High speed: tf = 40 ns (typ.) (IC = −0.5A)
Absolute Maximum Ratings (Ta = 25°C) Note:1 Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 0.36 g (typ.)
