2SA2154CT ,Transistor for low frequency small-signal amplificationElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA2161J ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2162 ,Small-signal deviceElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
2SA2166 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA2168 , 2SA2168
2SA2180 , PNP Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC5094 ,Dual Inverter (open drain) with 3.6 V Tolerant Input and OutputApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095-O , VHF~UHF Band Low Noise Amplifier Applications
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SA2154CT
Transistor for low frequency small-signal amplification
2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = −50V, IC = −100mA (max)
• Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)
• High hFE : hFE = 120 to 400 Complementary to 2SC6026CT
Absolute Maximum Ratings (Ta = 25°C) * : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Note: hFE classification Y (F): 120 to 240, GR (H): 200 to 400 ( ) marking symbol
Marking Unit: mm
Weight: 0.75 mg (typ.)
Type Name
hFE Rank
