2SA2142 ,Power transistor for high-speed switching applicationsElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitCollect ..
2SA2151 , isc Silicon PNP Power Transistor
2SA2154CT ,Transistor for low frequency small-signal amplificationElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA2161J ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2162 ,Small-signal deviceElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
2SA2166 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SC5088 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5089 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5090 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC5094 ,Dual Inverter (open drain) with 3.6 V Tolerant Input and OutputApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SA2142
Power transistor for high-speed switching applications
2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2142 High-Voltage Switching Applications High breakdown voltage: VCEO = −600 V
Absolute Maximum Ratings (Ta = 25°C) Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 0.36 g (typ.)
