2SA2118 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.8±0.1 0.55±0.15Parameter Symbol Rating UnitCollector-base volt ..
2SA2118 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2119K , Low frequency transistor
2SA2140 ,Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1Electrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2142 ,Power transistor for high-speed switching applicationsElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitCollect ..
2SA2151 , isc Silicon PNP Power Transistor
2SC5086 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086FT-Y , VHF~UHF Band Low Noise Amplifier Applications
2SC5088 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5089 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5090 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SA2118
