2SA2070 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = -0.1 A) FE C Low collector-emitter s ..
2SA2070 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching
2SA2071 , High speed switching. (Tf : Typ. : 20ns at IC = -3A) Low saturation voltage, typically
2SA2071 , High speed switching. (Tf : Typ. : 20ns at IC = -3A) Low saturation voltage, typically
2SA2077 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2078 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053-T100Q , Medium power transistor (50V, 1A)
2SC5060 , Power transistor (90-10V, 3A)
2SC5064 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC5065 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SA2070
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070 High-Speed Switching Applications
DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.)
Maximum Ratings (Ta = 25°C) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 0.05 g (typ.)
