2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2067 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.5±0.2 2.5±0.2Parameter Symbol Rating Unit1231 : BaseCollector- ..
2SA2069 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter ..
2SA2070 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = -0.1 A) FE C Low collector-emitter s ..
2SA2070 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching
2SA2071 , High speed switching. (Tf : Typ. : 20ns at IC = -3A) Low saturation voltage, typically
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053-T100Q , Medium power transistor (50V, 1A)
2SC5060 , Power transistor (90-10V, 3A)
2SC5064 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC5065 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SA2067
