2SA2065 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter s ..
2SA2066 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter s ..
2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2067 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.5±0.2 2.5±0.2Parameter Symbol Rating Unit1231 : BaseCollector- ..
2SA2069 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter ..
2SA2070 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = -0.1 A) FE C Low collector-emitter s ..
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100R , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053-T100Q , Medium power transistor (50V, 1A)
2SC5060 , Power transistor (90-10V, 3A)
2SA2065
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2065 High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications High DC current gain: hFE = 200 to 500 (IC = −0.15 A) Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) High-speed switching: tf = 37 ns (typ.)
Maximum Ratings (Ta = 25°C) Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C) See Figure 1 circuit diagram.
Unit: mm
Weight: 0.01 g (typ.)
