2SA2064 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2065 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter s ..
2SA2066 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter s ..
2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2067 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.5±0.2 2.5±0.2Parameter Symbol Rating Unit1231 : BaseCollector- ..
2SA2069 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter ..
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100R , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SC5053-T100Q , Medium power transistor (50V, 1A)
2SC5060 , Power transistor (90-10V, 3A)
2SA2064
