2SA2060 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2061 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = 0.5 A) FE C Low collector-emitter sat ..
2SA2064 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2065 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter s ..
2SA2066 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter s ..
2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5050 , Silicon NPN Epitaxial
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100R , Medium power transistor (50V, 1A)
2SC5053T100Q , Medium power transistor (50V, 1A)
2SA2060
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2060 High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications High DC current gain: hFE = 200 to 500 (IC = −0.5 A) Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta = 25°C) Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 0.05 g (typ.)
