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2SA2057PanasonicN/a2avaiPower Device


2SA2057 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2058 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter sa ..
2SA2059 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2060 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2061 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = 0.5 A) FE C Low collector-emitter sat ..
2SA2064 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5048 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "eftf't wr O . O 9 L0 -lnlgn voltage : ..
2SC5049 , Silicon NPN Epitaxial
2SC505 , High Voltage Transistors
2SC505 , High Voltage Transistors
2SC5050 , Silicon NPN Epitaxial
2SC5053 T100Q , Medium power transistor (50V, 1A)


2SA2057

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