2SA2028 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2028 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C2.0±0.2aParameter Symbol Rating Unit 10˚Collector-base voltage (E ..
2SA2029 , PNP -150mA -50V General Purpose Transistors
2SA2030 , Low frequency transistor
2SA2037 ,DC / DC Converter ApplicationsFeatures• Adoption of MBIT process.•Large current capacity.3.0• Low collector-to-emitter saturation ..
2SA2039 ,PNP Epitaxial Planar Silicon Transistors High Current Switching ApplicationsFeatures[2SA2039 / 2SC5706]• Adoption of FBET, MBIT process.6.52.35.0•Large current capacitance.0.5 ..
2SC5027 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS, COLOR TV CHROMA OUTPUT APPLICATIONS2SC5027TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)HIGH VOLTAGE SWITCHING AND ..
2SC5027 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS, COLOR TV CHROMA OUTPUT APPLICATIONSAPPLICATIONS i"r'=''z''1i='a?="i--s,irts--i--,f.) .A.0 High Voltage : VCEQ=3UUV0 Small Collector Ou ..
2SC5029 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit 1n mmLow Saturation Voltage'' A '-Nt fnhM: v CE (sat) = U.0 v (max)0 High Collect ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)nC0.75– 0.1Parameter Symbol Ratings UnitCollector to base voltag ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Featuresnf 3.2– 0.1l High collector to emitter VCEOl High-speed switching––l Full-pack package with ..
2SC5039 , 2SC5039
2SA2028
