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2SA1987TOSHIBAN/a349avaiTrans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL


2SA1987 ,Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PLELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
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2SC5004 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDFEATURES• High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)3• Low Cre : 0.9 pF TYP. (@ VCB ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDES ..
2SC5005 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDFEATURES• High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)• Low Cre : 0.7 pF TYP. (@ VCB ..
2SC5005-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SC5006 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI ..


2SA1987
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL
TOSHIBA ZSA1987
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1987
POWER AMPLIFIER APPLICATIONS Unit in mm
20.5MAX. 3310.2
0 High Collector Voltage : VCEO= -230V (Min.)
26.0i0.5
0 Complementary to 2SC5359
0 Recommend for 100W High Fidelity Audio Frequency Amplifier
Output Stage.
20.01’ 0.6
MAXIMUM RATINGS (Tc=25°C) 1.0i835
5.45.t0.15 5.45:0.15
CHARACTERISTIC SYMBOL RATING UNIT mo re"
ru.'-. <
Collector-Base Voltage VCBO -230 V ‘3: g E
Collector-Emi) Voltage VCEO -230 V 's:=ttrrzt
Emitter-Base Voltage VEBO -5 V 1 2 3 -
Collector Current 1C - 15 A 1. B ASE
Base Current IE -1.5 A 2. COLLECTOR (HEAT SINK)
. . . 3. EMITTER
Collectoor Power Dissipation PC 180 W
(Te-- 25 C) JEDEC -
J unction Temperature Tj 150 "C JEIT A -
Storage Temperature Range Tstg -55--150 C TOSHIB A 2-21F1A
Weight : 9.75g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 230V, IE = 0 - - - 5.0 pdk
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 5.0 PA
Collector-Emi;
Breakdown Voltage V (BR) CEO IC - - 50mA, IB - O - 230 - - V
hFE (1)
V =-5V, I =-IA 55 - 160
DC Current Gain (Note) CE C -
hFE (2) VCE-- -5V, IC-- -7A 35 70 -
Collector-Emitter
Saturation Voltage VCE (sat) IC - - 8A, IB - - 0.8A - - 1.5 - 3.0 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 7A - - 1.0 - 1.5 V
Transition Frequency fT VCE = - 5V, IC = - IA - 30 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 360 - pF
(Note) hFE (1) Classification R : 55--110, 0 .. 80--160
1 2001-10-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
VCE (sat) (V)
COLLECTOEEMITTER SATURATION
VOLTAGE
10 (A)
COLLECTOR CURRENT
IC - VCE
COMMON EMITTER
c = 25°C
-8 -100
IB-- -10mA -50
0 -2 -4 -6 -8 - 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Tc = 100°C
-0.03 COMMON EMITTER
IC / IB = 10
- 0.01
-0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT IC (A)
SAFE OPE RATING AREA
1C MAX. (PULSED) >:<
- 3 0 1 msy.t.
_ 10 10 MAX.
(CONTINUOUS)
DC OPERATION
Tc = 25°C
.)..4 SINGLE
- 0.1 NONREPETITIVE
PULSE Te=25''C
CURVES MUST BE
-0.03 DERATED LINEARLY
WITH INCREASE IN
0 01 TEMPERATURE.
-1 -3 -10 -30 -100 -300 -1000 -3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEO MAX.
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
2SA1987
IC - VBE
MMON EMITTER
CE = -5V
Te-- 100°C
0 -0.4 -0.8 - 1.2 - 1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
300 Te-- 100°C
3 COMMON EMITTER
VCE = - 5V
-0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA ZSA1987
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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