2SA1971 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit in mm--_-... 1cnIIAvI A.tiMAA. I.U|VIH/\.1.7MAX. O_AiODSO TThrh antnc‘n . Vnm = _ ..
2SA1972 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit in mm5.1 MAX.I ttz=c:zze, ITThrh antnc‘n . Vnm = _400VMAXIMUM RATINGS (Ta = 25°C) ..
2SA1977 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1977PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978-T1B ,fT=4GHz PNP Bip TrDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4958-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SA1971
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS
TOSHIBA ZSA1971
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1l971
HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm
4,6MAX. 16W”:-
0 High Voltage : VCE = -400V 1-7MAX- 04:005 -
C-ill- Tr
MAXIMUM RATINGS (Ta = 25°C) , 1:; g
CHARACTERISTIC SYMBOL RATING UNIT , . E "'
0.00 " - S,
Collector-Base Voltage VCBO -400 V fh45-0.05 I 3
Collector-Emitter Voltage VCEO -400 V 04:88? Ill 04:38?
Emitter-Base Voltage VEBO -7 V 1 5:01 15:01
DC 1C -0.5
Collector Current Pulse ICP - 1 A [LII)
Base Current IB -0.25 A 1 2 3
Collector Power Ta = 25°C P 500 mW
Dissipation Ta = 25°C (Note) C 1000 1 BASE
Junction Temperature Tj 150 "C 2: COLLECTO (FIN)
Storage Temperature Range Tstg -55--150 T 3. EMITTER
(Note) : Mounted on Ceramic Substrate (250 mm2 X 0.8 t) JEDEC -
JEITA -
TOSHIBA 2-5KIA
Weight : 0.05 g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -400 V, IE = 0 - - -10 PA
Emitter Cut-off Current IEBO VEB = -7V, 1C = 0 - - -1 PA
Collector-Emitter - -
Breakdown Voltage V (BR) CEO IC - -10 mA, 1B - 0 -400 - - V
. hFE (1) VCE = -5V, IC = -20mA 140 - 450
DC Current Gain hFE (2) VCE = -5V, IC = -100mA 140 - 400
Co11ector-Emitter VCE(sat) IC = -100 mA, IB = -10mA - -0.4 -1.0 V
Saturation Voltage
Base-Emitter
Saturation Voltage VBE (sat) IC = -100mA, IB = -10mA - -0.76 -0.9 V
Transition Frequency fT VCE = -5V, 10 = -50 mA - 35 - MHz
Collector Output Capacitance Cob V0320 = -10 V, IE = o, f = 1 MHz - 18 - pF
Turn-on Time ton HSINPUT IB 1 OUTPUT - 0.2 -
. . IIJUIBZ -
gigfhmg Storage Time tstg IBIILIU 'i-ii-ic-jo:'?,',' - 2.3 - ,as
- -200 V
. I - 10 mA, IV - 20 mA
F 11 T Bl: BZC - 0.2 -
a me tf DUTY CYCLE s 1%
2001 -1 0-29
TOSHIBA 2SA1971
Ic - VBE
COMMON EMITTER
VCE = 5 V
-200 Ta = 100°C 25
IB = -0.5 mA
COMMON EMITTER
COLLECTOR CURRENT [C (mA)
Ta = 25''C
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
COLLECOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hFE - IC VCE(sat) - IC
1000 -30
COMMON EMITTER
500 100 IC/IB = 10
100 Ta = -55''C
DC CURRENT GAIN hFE
VOLTAGE vCEmt) (V)
COMMON EMITTER
5 V = 5 V
3 CE -0.05
- _ - - -0.03
1 10 100 1000 -1 -10 -100 _1000
COLLECTOREMIT’I‘ER SATURATION
Ta = - 55''C
LLE T R
CO C 0 CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VBE (sat) - IC
COMMON
EMITTER
IC/IB = 10
VBE (Sat) (V)
- 0.3 Ta = 100°C
BASE-EMITTER SATURATION VOLTAGE
-1 -10 -100 -500
COLLECTOR CURRENT Ic (mA)
2 2001-10-29
TOSHIBA
2SA1971
SAFE OPERATING AREA
IIIIIIIII I ll II
10 MAX. (PULSED) y.f 100 As X
-1000 I I IIIIIII I h A _ 300psM
IC M x. (CONTINUOUS) k N l x I lllll
2 , , h 10 Ms yd.
a "s. \ \ \
v -300 , I
J? N N
E N, 10 ms .)k. N
a -100 _ I I I I X \ l
E \ l l, l, ! ll, l
gr. _- DC OPERATION r---ims.yi. \ l
ie - Ta = 25''C . l (s'
ttt -30 - 250mm2 x 0.8t N Nr
F: -Mounted on Ceramic
a Substrate ss, A
j -10 I I I I I I III I _
O X SINGLE N ',
Q NONREPETITIVE l
PULSE Ta = 25°C
_ Curves must be derated (
linearly with increase in
temperature. VCEO MAX.
-1 I I... I I
-1 -3 -10 -30 -100 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1971
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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