2SA1962 ,PNP Epitaxial Silicon Transistorapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1962 ,PNP Epitaxial Silicon TransistorFeatures• High Current Capability: I = -17ACTO-3P• High Power Dissipation : 130watts 1• High Freque ..
2SA1962-O , Power Amplifier Applications
2SA1962OTU , PNP Epitaxial Silicon Transistor
2SA1962RTU , PNP Epitaxial Silicon Transistor
2SA1969 ,PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · High f (f =1.7GHz typ).T T unit:mm · Large current capacity (I =–400m ..
2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC4944 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SA1962
PNP Epitaxial Silicon Transistor
TOSHIBA
2SA1962
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1962
POWER AMPLIFIER APPLICATIONS
Output Stage.
MAXIMUM RATINGS (Tc = 25°C)
High Collector Voltage : VCEO= -230V (Min.)
Complementary to 2SC5242
Recommend for 80W High Fidelity Audio Frequency Amplifier
Unit in mm
3.3MAX.
20.01 0.3
20.5 $0.5
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT 5.45 t o. 2 5.45 i 0.2
Collector-Base Voltage VCBO -230 V t:' 'ic? co
Collector-Emi; Voltage VCEO -230 V il, 2 . .1. . r'-H'ii'
Emitter-Base Voltage VEBO -5 V L_, _1-"3"? +2
Collector Current 10 - 15 A
Base Current IB -1.5 A 1. BASE
. . . 2. COLLECTOR HEAT SINK
(2,t"it,rc)Power Dissipation PC 130 W 3. EMITTER ( ,
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg -55--150 "C JEITA -
TOSHIBA 2-16C1A
Weight : 4.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -230V, IE = 0 - - - 5.0 pA
Emitter Cut-off Current IEBO VEB = -5V, IC = 0 - - - 5.0 pA
Collector-Emi; Breakdown
Voltage V (BR) CEO 10 - - 50mA, IB - 0 - 230 - - V
hFE (1)
V ---5V, I ---IA 55 - 160
DC Current Gain (Note) CE C
hFE (2) VCE = -5V, IC = -7A 35 60 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - - 8A, IB - - 0.8A - - 1.5 - 3.0 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 7A - - 1.0 - 1.5 V
Transition Frequency fT VCE = - 5V, IC = - IA - 30 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = 1MHz - 360 - pF
(Note) '. hFE (1) Classification
R : 55--110, 0 .' 80--160
2001 -1 0-29
TOSHIBA
1C (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (541,) (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
MMON EMITTER
c = 25'C
0 -2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
-0.03 COMMON EMITTER
10/13: 10
-0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
1C MAX. (PULSED) X
IC MAX.
(CONTINUOUS)
-30 Ims):'f
_ 3 DC OPERATION
Tc = 25''C
X SINGLE
NONREPETITIVE
PULSE Tc=25°C
-0.1 CURVES MUST BE
DERATED LINEARLY
-0.05 WITH INCREASE IN
0 03 TEMPERATURE.
-3 -10 -30 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEO MAX.
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
2SA1962
IC - VBE
MMON EMITTER
CE = - 5V
Tc = 100°C
-0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
Te = 1 00'C
COMMON EMITTER
VCE = -5V
-0.01 -0.1 -1 - 10
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA ZSA1962
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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