2SA1943 ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943. ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943OTU , PNP Epitaxial Silicon Transistor
2SA1943RTU , PNP Epitaxial Silicon Transistor
2SA1944 , FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1946 , Low collector saturation voltage Excellent linearity of DC forward current gain
2SC4908 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4909 ,NPN Epitaxial Planar Silicon Transistor Muting Circuits, DriversAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4910 ,NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4913 , Silicon NPN Triple Diffused
2SC4913 , Silicon NPN Triple Diffused
2SC4915 ,Transistor Silicon NPN Epitaxial Planar Type High Frequency Amplifier Applications FM, RF, MIX, If Amplifier ApplicationsApplications Small reverse transfer capacitance: C = 0.55 pF (typ.) re Low noise figure: NF ..
2SA1943-2SA1943.
PNP Epitaxial Silicon Transistor
TOSHIBA 2SA1943
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1943
POWER AMPLIFIER APPLICATIONS Unit in mm
0 Complementary to 2SC5200 ut
0 Recommended for 100W High Fidelity Audio Frequency ii
Amplifier Output Stage. 3 N
MAXIMUM RATINGS (Tc = 25°C) 2.5
CHARACTERISTIC SYMBOL RATING UNIT +0.3
Collector-Base Voltage VCBO -230 V 5.45h0.15 5yMi10.15
Collector-Emi; Voltage VCEO -230 V M, t'
Emitter-Base Voltage VEBO -5 V 3'? ar. g
Collector Current IC -15 A 1uezrei. m
Base Current IB -1.5 A 1 2 3
Collictorc Power Dissipation PC 150 W l. T B ASE
(Te - 25 C) 2. COLLECTOR (HEAT SINK)
Junction Temperature Tj 150 "C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
JEITA -
TOSHIBA 2-21F1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight : 9.75 g(Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -230 V, IE = 0 - - -5.0 PA
Emitter Cut-off Current IEBO VEB = -5V, IC = 0 - - -5.0 PA
Collector-Emi; Breakdown
Voltage V(BR)CEO IC - -50 mA, IB - 0 -230 - - V
hFE (1)
V = - V I = -IA - 16
DC Current Gain (Note) CE 5 ' C 55 0
hFE (2) VCE = -5V, IC = -7A 35 60 -
Collector-Emi; Saturation
Voltage VCE (sat) IC - -8A, IB - -0.8A - -1.5 -3.0 V
Base-Emitter Voltage VBE VCE = -5V, 10 = -7 A - -1.0 -1.5 V
Transition Frequency fT VCE = -5V, IC = -1 A - 30 - MHz
Coll tor Out ut Ca a itan C VCB = -10V, IE = o, 360 F
ec p p c ce ob f = 1 MHz - - p
(Note) : hFE(1) Classification R : 55--110, o : 80--160
1 2001-10-29
TOSHIBA
1C (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEmw (V)
10 - VCE
MMON EMITTER
c = 25°C
0 -2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Tc = 100 C -25
COMMON EMITTER
Ic/IB = 10
-0.1 - 1 - 10
-0.01 - 100
COLLECTOR CURRENT 1C (A)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
10 (A)
COLLECTOR CURRENT
-3 -10 -30
IC MAX. (PULSED) X
2SA1943
IC - VBE
MMON EMITTER
CE = -5 V
Te = 100°C
-0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
Tc = 100°C
COMMON EMITTER
VCE = -5 V
-0.1 -1 -10
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
IC MAX. msg.
CONTINUO
10 msik.
100 msX
DC OPERATION
Tc = 25°C
X SINGLE
NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
VCEO MAX.
- 100 -300 - 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA1943
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
1 INFINITE HEAT SINK
rm (°C/W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 l 10 100 1000
PULSE WIDTH tw (s)
3 2001-10-29
TOSHIBA 2SA1943
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
:
www.loq.com
.
