2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PLAPPLICATIONS Unit in mmI ?DRMAX d22+n7 IO Complementary to 28051990 Recommend for 80W High Fidelity ..
2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL2SA1942POWER AMPLIFIER
2SA1943 ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943. ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943OTU , PNP Epitaxial Silicon Transistor
2SA1943RTU , PNP Epitaxial Silicon Transistor
2SC4908 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4909 ,NPN Epitaxial Planar Silicon Transistor Muting Circuits, DriversAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4910 ,NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4913 , Silicon NPN Triple Diffused
2SC4913 , Silicon NPN Triple Diffused
2SC4915 ,Transistor Silicon NPN Epitaxial Planar Type High Frequency Amplifier Applications FM, RF, MIX, If Amplifier ApplicationsApplications Small reverse transfer capacitance: C = 0.55 pF (typ.) re Low noise figure: NF ..
2SA1941
Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN
TOSHIBA
2SA1941
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA'il941
POWER AMPLIFIER APPLICATIONS
Output Stage
MAXIMUM RATINGS (Tc = 25°C)
Complementary to 2SC5198
Recommend for 70W High Fidelity Audio Frequency Amplifier
Unit in mm
3.3MAX.
2 0.01 0.3
20.5i0.5
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT 1 .0 - 0.25
Collector-Base Voltage VCBO -140 V 5.45:0.2 1 2 3 5.45:0.2
Collector-Emitter Voltage VCEO -140 V ti 33'? co
Emitter-Base Voltage VEBO -5 V ii, 3 I .1. ., 44“;-
Collector Current IC -10 A - _----- l ,3
Base Current IB -1 A
. . . 1. BASE
Collectoor Power Dissipation PC 100 W 2. COLLECTOR (HEAT SINK)
(T0225 C) 3. EMITTER
2,lCtstn/t,',1C'l'taut,1Ce,, 3]. 5515:)50 cg JEDE C -
ora e em era ure an e - --
g p g stg JEIT A -
TOSHIBA 2-16C1A
Weight : 4.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 140V, IE = 0 - - -5.0 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 5.0 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - - 50mA, IB - 0 - 140 - - V
hFE (1)
V =-5V, I =-IA 55 - 160
DC Current Gain (Note) CE C
hFE (2) VCE = - 5V, IC = - 5A 35 83 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - - 7A, IB - - 0.7A - - 0.8 - 2.0 V
Base-Emitter Voltage VBE VCE = - 5V, 10 = - 5A - - 1.0 - 1.5 V
Transition Frequency fT VCE = - 5V, IC = - IA - 30 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = 1MHz - 320 - pF
(Note) : hFE (1) Classification
R .' 55--110, O : 80--160
2001 -1 0-29
TOSHIBA ZSA1941
IC - VCE IC - VBE
COMMON
A EMITTER A
s Tc=25°C s
o o _ o
E (ii Te=100 c
Fe a 25°C
E3 -30 E3 -25T
o -20 0 COMMON EMITTER
IB---10mA VCE=-5V
0 -2 -4 -6 -8 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0
C0LLECT0R-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC hFE - IC
-10 1000
Ev T 100°C
g if, -1 M
a: i; E Tc=25°C
E Q 100
Es > Z T - _25°c
E Tc=100°C 2 C-
a? c U
ttt - F,
'jjj.'-) 0.1 q E
C2 0 To: -25 C m
m > n:
3 COMMON EMITTER i?
o Tc=25°C 10
O Ic/IB=10 o
-0.01 O
-0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT IC (A) COMMON EMITTER
SAFE OPERATING AREA VCE=-5V
-50 IIIIIIII I I I III 30.01 -0.1 -1 -10
-30 .w. I ll
10 MAX. (PULSED) X lmsx COLLECTOR CURRENT IC (A)
IC MAX. 5 \
2 (CONTINUOUS) N. " 10msyd.
v -10 N “ _ ‘V I I I I I
S? N k , 4 I I I I I
-5 N t 100rnsW.
M -3 N, f
b' DC OPERATION \
o 1 Tc=25°C A
O -0.5 . l
'3 lk. SINGLE
.2 -0.3 NONREPETITIVE l
fir PULSE Tc=25°C (
CURVES MUST BE
DERATED LINEARLY
-0.1 WITH INCREASE IN
TEMPERATURE. VCEO MAX.
-0.05 I I I I I I I
-2-3 -10 -30 -100 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-10-29
TOSHIBA ZSA1941
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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