2SA1940 ,Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PNELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SA1941 ,Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PNELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PLAPPLICATIONS Unit in mmI ?DRMAX d22+n7 IO Complementary to 28051990 Recommend for 80W High Fidelity ..
2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL2SA1942POWER AMPLIFIER
2SA1943 ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943. ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SC4901YK-TL-E , Silicon NPN Epitaxial
2SC4908 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4909 ,NPN Epitaxial Planar Silicon Transistor Muting Circuits, DriversAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4910 ,NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4913 , Silicon NPN Triple Diffused
2SC4913 , Silicon NPN Triple Diffused
2SA1940
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN
TOSHIBA 2SA1940
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1940
POWER AMPLIFIER APPLICATIONS Unit in mm
0 Complementary to 2SC5197
0 Recommend for 55W High Fidelity Audio Frequency Amplifier
Output Stage.
3.3MAX.
2 0.01 0.3
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 1 0 CAs g
Collector-Base Voltage VCBO - 120 V 5.45t 0.2 5.45t 0.2
Collector-Emitter Voltage VCEO - 120 V x. Cg
Emitter-Base Voltage VEBO -5 V i', li:. _2 ti'
Collector Current 10 -8 A "'__ '-'"l-'-'''l--4 ‘1;
Base Current IB -0.8 A 1 2 3 q
Collector Power Dissipation
o P 80 W l. BASE
(Te=25 C) C 2. COLLECTOR (HEAT SINK)
Junction Temperature Tj 150 "C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
JEITA -
TOSHIBA 2-16C1A
ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 5.0 PA
Emitter Cut-off Current IEBO VEB = -5V, 10 =0 - - -5.0 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - - 50mA, IB - 0 - 120 - - V
km (1)
= - I = - IA - 1
DC Current Gain (Note) VCE 5V, C 55 60
hFE (2) VCE= -5V, IC-- -4A 35 75 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - -6A, IB - -0.6A - -0.80 -2.0 V
Base-Emitter Voltage VBE VCE = -5V, IC = -4A - -0.97 - 1.5 V
Transition Frequency fT VCE = -5V, IC = - IA - 30 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 260 - pF
(Note) : hFE (1) Classification R : 55--110, O : 80-160
1 2001-10-29
TOSHIBA
1C (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
10 (A)
CO LLECTOR CURREN T
10 - VCE
-300p .-250 COMMON
-200 EMITTER
. I Tc=25°C
, ’ -150
IB-- -10mA
0 -2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Tc = 100°C
Te = - 25°C
COMMON EMITTER
IC/IB= 10
-0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
-IC MAX. (PULSED) y.f
IC MAX. 1msik.
:(CONTINUOUS) _
1(hns)i(.
t k /100ms>§
M. SINGLE
-0.3 NONREPETITIVE
PULSE Tc=25''C
CURVES MUST BE l
DERATED LINEARLY
-0.1 WITH INCREASE IN VCEO MAX.
TEMPERATURE. l I l l I II
-0.05 I I I I I ll
-2-3 -10 -30 -100 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hp};
IC - VBE
Tc= 100°C
2SA1940
COMMON EMITTER
VCE = -5V
-0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
Tc = 100°C
Tc = 25°C
Tc = - 25°C
COMMON EMITTER
VCE = - 5V
-0.1 -1
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA 2SA1940
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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