2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.2$1,?High Transition Frequency : fT=70MHz (Typ.)Complementary to 2805174L4 : 0.4MA ..
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS2SA1932TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1932POWER AMPLIFIER
2SA1932. ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmDRIVER STAGE AMPLIFIER
2SA1937 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching Applications2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching
2SA1937 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = −600 V CEO Maximum Ratings (Ta = 25°C)Characteristic ..
2SA1939 ,Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PNapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC4891 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectopto-Emitter ..
2SC4892 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.35±0.11.05±0.1Parameter Symbol Rating Unit0.55±0.10.55±0.1Coll ..
2SC4899 , Silicon NPN Epitaxial
2SC4901 , Silicon NPN Epitaxial
2SC4901YK-TL-E , Silicon NPN Epitaxial
2SC4908 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SA1932-2SA1932.
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
POWER AMPLIFIER APPLICATIONS
2SA1932
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS
10 * 0.2 21.2
0 High Transition Frequency : fT=7OMHz (Typ.) %
0 Complementary to 2305174 a
MAXIMUM RATINGS T - 25°C :21
( a - ) Ff C0.5 fats
CHARACTERISTIC SYMBOL RATING UNIT 3
Collector-Base Voltage VCBO -230 V E
Collector-Emi; Voltage VCEO -230 V g J -
Emitter-Base Voltage VEBO -5 V 1 2 3 g 0.5 ti).lt
Collector Current 10 -1 A ntn + mh- l. BASE
Base Current 1B -0.1 A g 2. COLLECTOR
3. EMITTER
Collector Power Dissipation PC 1.8 W
J unction Temperature Tj 150 °C JEDEC -
Storage Temperature Range Tstg -5lr-150 "C JEITA -
TOSHIBA 2-10T1A
Wei ht : 1.5 (T .)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) g g yp
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -230V, IE =0 - - - 1.0 pA
Emitter Cut-off Current IEBO VEB = -5V, 10 =0 - - - 1.0 PA
Collector-Emitter Breakdown - -
Voltage V (BR) CEO 1C - - 10mA, IB - 0 - 230 - - V
DC Current Gain hFE VCE = -5V, IC = - 100mA 100 - 320
Collector-Emitter Saturation
Voltage VCE (sat) IC - - 500mA, IB - - 50mA - - - 1.5 V
Base-Emitter Voltage VBE VCE = -5V, 10 = -500rnA - - - 1.0 V
Transition Frequency fT VCE = - 10V, IC = - 100mA - 70 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 30 - pF
2001 -1 0-29
TOSHIBA
DC CURRENT GAIN hFE COLLECTOR CURRENT 10 (A)
TRANSITION FREQUENCY fT (MHz)
IC - VCE
IB---2mA
COMMON EMITTER
Ta = 25°C
0 - 2 - 4 - 6 - 8 - 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hEF - IC
COMMON EMITTER
500 VCE-- -5V
Tel: 100°C
100 25
50 -25
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
COMMON EMITTER
300 VCE---10V
Ta = 25°C
-5 -10 -30
-300 -1000
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMIT’I‘ER SATURATION
TRANSIENT THERMAL RESISTANCE
COLLECTOR CURRENT 10 (A)
2SA1932
IC - VBE
COMMON
EMITTER
VCE = - 5V
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
VOLTAGE VCE (sat) (V)
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
rth - tw
rth (°C/W)
3 CURVES SHOULD BE
APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE
PULSE)
0 NO HEAT SINK
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
2001 -1 0-29
TOSHIBA ZSA1932
PC - Ta SAFE OPERATING AREA
IC MAX. (PULSED) It.
ti; IC MAX.
3 (CONTINUOUS)
U) A -
E; S? -0.5
a -0.3
E k? E
E 5 DC OPERATION
:2 = o
:3; o -0.1 Ta 25 C
o t -0.05
.4 -0.03
o 25 50 75 100 125 150 175 8
AMBIENT TEMPERATURE Ta CC) ).k. SINGLE NONREPETITIVE
-0.01 PULSE Ta=25°C
CURVES MUST BE DERATED
-0.005 LINEARLY WITH INCREASE
_0.003 IN TEMPERATURE.
-1 -3 -5 -10 -30-50 -100 -300-500
VCEO MAX.
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-10-29
TOSHIBA ZSA1932
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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