2SA1930 ,Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NISAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fr = 200MHz (Typ.)_m'OtO ollmli::l+l ..
2SA1930. ,Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS2SA1930TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1930POWER AMPLIFIER
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.2$1,?High Transition Frequency : fT=70MHz (Typ.)Complementary to 2805174L4 : 0.4MA ..
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS2SA1932TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1932POWER AMPLIFIER
2SA1932. ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmDRIVER STAGE AMPLIFIER
2SA1937 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching Applications2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching
2SC4883A , Silicon NPN Epitaxial Planar Transistor
2SC4885 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER ..
2SC4891 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectopto-Emitter ..
2SC4892 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.35±0.11.05±0.1Parameter Symbol Rating Unit0.55±0.10.55±0.1Coll ..
2SC4899 , Silicon NPN Epitaxial
2SC4901 , Silicon NPN Epitaxial
2SA1930-2SA1930.
Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS
TOSHIBA 2SA1930
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
2SA1930
POWER AMPLIFIER APPLICATIONS Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS
0 High Transition Frequency : fT = 200MHz (Typ.)
0 Complementary to 2SC5171 g
MAXIMUM RATINGS (Ta = 25°C) . I
CHARACTERISTIC SYMBOL RATING UNIT il. l
Collector-Base Voltage VCBO -180 V 0752015 F .
Collector-Emi) Voltage VCEO -180 V 2541025 2.54h0.25
Emitter-Base Voltage VEBO -5 V '/2 _‘,Z- ri.
Collector Current IC -2 A 1?,c--jT-a2aum31-" i2. T _:[§
Base Current IB -1 A 0 d
Collector Power Ta = 25°C PC 2.0 W 1. BASE
Dissipation Te = 25°C 20 2. COLLECTOR
Junction Temperature Tj 150 T 3. EMITTER
Storage Temperature Range Tstg -55-150 "C JEDEC -
EIAJ -
TOSHIBA 2-10R1A
Weight : 1.7 g(Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -180V, IE = 0 - - -5.0 PA
Emitter Cut-off Current IEBO VEB = -5 V, 10 = 0 - - -5.0 PA
Collector-Emitter Breakdown
Voltage V(BR) CEO IC - -10mA, IB - 0 -180 - - V
. hFE (1) VCE = -5V, IC = -0.1 A 100 - 320
DC Current Gain hFE (2) VCE = - 5V, IC = -1 A 50 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - -1 A, IB - -0.1 A - -0.24 -1.0 V
Base-Emitter Voltage VBE VCE = -5 V, 10 = -1 A - -0.68 -1.5 V
Transition Frequency fT VCE = -5 V, IC = -0.3 A - 200 - MHz
ColleetorOut tC itan C VCB=-10V,IE=0, 26 F
o eco upu apac ace ob f=1MHz - - p
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-10-27 1/3
TOSHIBA
IC - VCE
M IB = -2mA
0 COMMON EMITTER
Tc = 25''C
0 - 2 - 4 - 6 - 8 - 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
Tc = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
COMMON EMITTER
IC/IB = 10
Te = - 25°C
-0.01 -0.1 - l - 10
COLLECTOR CURRENT 10 (A)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
10 (A)
COLLECTOR CURRENT
2SA1930
IC - VBE
Te = 100°C
- 25°C
COMMON EMITTER
VCE = -5V
0 -0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
COMMON EMITTER
Te = 100°C VCE = -5V
Te = 25°C
Te = -25''C
-0.01 -0.1 -1 - 10
COLLECTOR CURRENT IC, (A)
SAFE OPERATING AREA
-5316 'sii,r.'ovL's 13) 'x.' III
-3 l l N 100 ,us>2<
N \ .)
IC MAX. "Nt'"" \
. A h h I
.OUS) \ h , 10 ms).k.
Sh x - I I I
St /\ I I I
100 >:<
-0.3 -DC OPERATION\\ l y ms
- Tc = 25°C y \
-0.05 IT. SINGLE
NONREPETITIVE
-0.03 PULSE Te = 25°C \
CURVES MUST BE
DERATED l
LINEARLY WITH v MAX.
INCREASE IN l I TI I I III
-0.01 TEMPERATURE. \I I I I I III
I I I I I I I I
-3 -10 -30 -100 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2000-10-27 2/3
TOSHIBA 2SA1930
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE) NO HEAT SINK
INFINITE HEAT SINK
TRANSIENT THERMAL RESISTANCE
rm (°C/W)
0.001 0.01 0.1 l 10 100 1000
PULSE WIDTH tw (s)
2000-10-27 3/3
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