2SA1924 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS2SA1924ZSA1924HIGH VOLTAGE SWITCHING
2SA1924 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit in mm0 High Voltage : VCEO = -400V 2.0 Low Saturation Voltage : VCE (sat) = -1 V ..
2SA1930 ,Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NISAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fr = 200MHz (Typ.)_m'OtO ollmli::l+l ..
2SA1930. ,Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS2SA1930TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1930POWER AMPLIFIER
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.2$1,?High Transition Frequency : fT=70MHz (Typ.)Complementary to 2805174L4 : 0.4MA ..
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS2SA1932TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1932POWER AMPLIFIER
2SC4881 ,Silicon NPN Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight : 1.7 g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UN ..
2SC4883A , Silicon NPN Epitaxial Planar Transistor
2SC4885 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER ..
2SC4891 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectopto-Emitter ..
2SC4892 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.35±0.11.05±0.1Parameter Symbol Rating Unit0.55±0.10.55±0.1Coll ..
2SC4899 , Silicon NPN Epitaxial
2SA1924
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS
TOSHIBA 2SA1924
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1l924
HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm
8.3MAX.
l 5.8 gt3.1-+0.1
0 High Voltage : VCEO = -400V t", Carr-Til., m
3;?” oi 2 i
0 Low Saturation Voltage : VCE (sat) = -1 V (Max.) J L. x. tl
(IO: -100mA,1B= -10mA) ir', :
0 Collector Metal (Fin) is Fully Covered with Mold Resin 1.0MAX. l
1.9MAX. I z'
0.75:0.15 5
MAXIMUM RATINGS (Tc = 25°C) .-
CHARACTERISTIC SYMBOL RATING UNIT 2 3 + 0 1 2 3 t0 1L
Collector-Base Voltage VCBO -400 V 1 2 3 u? if
Collector-Emi; Voltage VCEO -400 V m -u' an air: w- -- F :[g
Emitter-Base Voltage VEBO -7 V 3 _- m
D I -0. '/2. 1. EMITTER
Collector Current C C 5 A Ct 2. COLLECTOR
Pulse ICP - 1 3. BASE
Base Current o IB -0.25 A JEDEC -
Collector Power Ta = 25 C P 1 W
Dissipation Tc = 25°C C 10 JEITA -
J unction Temperature Tj 150 "C TOSHIBA 2-8H1A
Storage Temperature Range Tstg -55--150 "C) Weight : 0.82 g (Typ.)
1 2001-10-29
TOSHIBA 2SA1924
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector CU-off Current ICBO VCB = -400 V, IE = 0 - - -10 PA
Emitter Cut-off Current IEBO VEB = -7V, IC = 0 - - -1 PA
Collector-Emi; Breakdown
Voltage V(BR) CEO IC - -10mA, IB - 0 -400 - - V
. hFE (1) VCE = -5V, IC = - 20mA 140 - 450
DC Current Gain hFE (2) VCE = -5V, IC = - 100mA 140 - 400
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - -100mA, IB - -10mA - -0.4 -1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - -100mA, IB - -10mA - -0.76 -0.9 V
Transition Frequency fT VCE = -5V, IC = -50mA - 35 - MHz
Collector Out ut Ca acitance C VCB = -10 V, IE = o, 18 F
p p ob f = 1 MHz - - p
. OUTPUT
Turn-on Time ton 20 ps INPUT IB1 - 0.2 - ps
s . hi IHEIBz 'iii-fri'
itll: mg Storage Time tstg 1B1 - 2.3 - gs
1me VCC = -200V
. IBI = -10mA, IB2 = 20mA,
2 2001-10-29
TOSHIBA 2SA1924
Ic - VBE
COMMON EMITTER
VCE = 5 V
-200 Tc = 100°C 25
IB = -0.5 mA
COMMON EMITTER
COLLECTOR CURRENT 10 (mA)
Tc = 25°C
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
COLLECOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hFE - IC VCE(sat) - IC
1000 -30
COMMON EMITTER
500 100 IC/IB = 10
100 Te = - 55''C
DC CURRENT GAIN hFE
VOLTAGE vCEmt) (V)
COMMON EMITTER
5 V = 5 V
3 CE -0.05
- _ - - -0.03
1 10 100 1000 -1 -10 -100 _1000
COLLECTOREMIT’I‘ER SATURATION
c = -55''C
LLE T R
CO C 0 CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VBE (sat) - IC
COMMON
EMITTER
IC/IB = 10
VBE (Sat) (V)
- 0.3 Tc = 100°C
BASE-EMITTER SATURATION VOLTAGE
-1 -10 -100 -500
COLLECTOR CURRENT Ic (mA)
3 2001-10-29
TOSHIBA
COLLECTOR CURRENT IC (mA)
- 1000
SAFE OPERATING AREA
100 As X
10 MAX. (PULSED)X
IC MAX. (CONTINUOUS)
10 ps yd.
DC OPERATION
-30 Te = 25°C
X SINGLE
NONREPETITIVE
PULSE Tc = 25''C
Curves must be derated
linearly with increase in
temperature. VCEO MAX.
-1 -3 -10 -30 -100 -300 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2SA1924
2001 -1 0-29
TOSHIBA 2SA1924
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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