2SA1869 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1870 , High-speed Switching Transistor (-60V, -12A)
2SA1871 ,High-speed high-voltage switching PNP 3-diffusion transFEATURES• New package with dimensions in between those of small signaland power signal package Hig ..
2SA1873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = −50 V, I ..
2SA1873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency Gen ..
2SA1879 , Switching Power Transistor(-7A PNP)
2SC4810 ,Silicon power transistorDATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SC4813 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SC4813NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SC4815 ,Silicon power transistorfeatures low VCE(sat) and high hFE.This transistor is ideal for use as a driver in DC/DC converters ..
2SC4821 ,NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4831 , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SC4833 , Switching Power Transistor(5A NPN)
2SA1869
Silicon PNP Power Transistors TO-220F package
TOSHIBA
2SA1869
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1869
POWER AMPLIFIER APPLICATIONS
0 Good Linearity of hFE
0 Complementary to 2SO1935
MAXIMUM RATINGS (Tc = 25°C)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.75 , 0.15
Collector-Base Voltage VCBO -50 V 2.54ur0.25 2.54t0.25
Collector-Emi) Voltage VCEO -50 V m w
._ 1 2 3 N'
Emitter-Base Voltage VEBO -5 V <3; - _ g
Collector Current IC -3 A tii'trfEr--Ii,',)
Base Current 1B -0.3 A
. . . 1. BASE
f,tleht,' Power Dissipation PC 10 W 2. COLLECTOR (HEAT SINK)
(Te=25 C) 3. EMITTER
. T T; 1 o
Junction emperature J 50 0C JEDE C -
Storage Temperature Range Tstg -55--150 C
JEITA SC-67
TOSHIBA 2-10R1A
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -50V, IE = 0 - - - 1.0 PA
Emitter Cut-off Current IEBO VEB = -5V, 10 = 0 - - - 1.0 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - - lOmA, IB - O - 50 - - V
hFE (1)
V = -2V, I = -0.5A 70 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = - 2V, IC = - 2.5A 30 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - - 2A, 1B - - 0.2A - - 0.3 - 0.6 V
Base-Emitter Voltage VBE VCE = - 2V, 10 = - 0.5A - - 0.8 - 1.0 V
Transition Frequency fT VCE = - 2V, 10 = - 0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 35 - pF
(Note) : hFE (1) Classification
o : 70--140, Y : 120--240
2001 -1 0-29
TOSHIBA ZSA1869
IC - VCE hFE - IC
l/ -40 r....-''" -30
_53// s.,....------'"''''''" 451 500
2 /7/ Tc=100°C 25
V ,,t'C m........------""- -20 m 300
.---" Cu
J? V/C.-- s
-2 I ’,’ .---" -15- a
B ...--- m
a ff, w.,...-'-'"'"'" l < 1
il',, T w........-.--------" -10 E 50
a: ,/ SE 30
0 -1 D
B IB---5mA o
5 I l D 1
8 COMMON EMITTER COMMON EMITTER
Tc=25°C 5 VCE---2V
0 -2 -4 -6 -8 -10 -0.01 -0.1 -1 -10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC IC - VBE
a COMMON COMMON
fi,' EMITTER A 2.5 EMITTER
A -1 = It - . VCE=2V
it:'iiii IC/IB 10
ti ' -0.5 H -2
m si.'r's H
a m -0.3 a p;
M 0 To: 100 C y,
E> td -1.5
gm ie Tc=100°C
[13:3 -0.1 tad
g: 0 -1
F,e-0.05 ti; 25 25
B> m -
.2 -0.03 :d
d, O -0.5
-0.01 o
-0.01 -0.1 -1 -10 o -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-10 I I I Illlll
PC - Ta :10 MAx.0PULSEIr2f
p: ( Te Ta -3 N Ims).k
0 INFINITE HEAT SINK 2 , h N l
'fii (2) NO HEAT SINK ' N N l (
t. S? IC MAX. \ ts, 10msMy
a e -1
© 5 (lllll xN 100msy.T.
Mc: - h 2(\
{:13 ttt -0.5-DC OPERATION
ir' 5 - Te=25t h h
f? 0 o -0.3 - N NNN
'ii'" g lllllllll i'tl'
g 5 X SINGLE N N
g 5 0.1 NONREPETITIVE N,
j .2 - . PULSE Tc=25°C
o t Curves must be derated
O -0.05 linearly with increase in
0.03 temperature.
0 25 50 75 100 125 150 175 200 . -1 -10 -100 -500
AMBIENT TEMPERATURE Ta (°C) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-10-29
TOSHIBA ZSA1869
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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