2SA1832F ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1836 ,PNP transistorFEATURES • High DC current gain: hFE2 = 200 TYP. 30 to 0.1• High voltage: VCEO = −50 V • Can be aut ..
2SA1837 ,Silicon PNP Power Transistors TO-220F packageTOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE7§A1227POWER AMPLIFIER
2SA1837. ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrc ..
2SA1837.. ,Silicon PNP Power Transistors TO-220F packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1862 , High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
2SC4784 , Silicon NPN Epitaxial
2SC4784YA-TL-E , Silicon NPN Epitaxial
2SC4787 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4791 , Silicon NPN Epitaxial
2SC4793 ,Silicon NPN Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4793. ,Silicon NPN Power Transistors TO-220F package2SC47937QC47Q?v - I lPOWER AMPLIFIER
2SA1832F
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832F Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SC4738F Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Cob VCB � �10 V, IE � 0, f � 1 MHz
Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol
Marking Unit: mm
Weight: 2.3 mg (typ.)
