2SA1826 ,PNP Epitaxial Planar Silicon Transistors 100V/3A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1831 ,PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1832 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1832 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency Gen ..
2SA1832F ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1836 ,PNP transistorFEATURES • High DC current gain: hFE2 = 200 TYP. 30 to 0.1• High voltage: VCEO = −50 V • Can be aut ..
2SC4780 ,TransistorAbsolute Maximum Ratings (Ta=25°C)Item Symbol A Value UnitCollector—Base Voltage VCBO 25 VCollector ..
2SC4783 ,NPN transistorFEATURES • High DC current gain: hFE2 = 200 TYP. 3• High voltage: VCEO = 50 V 0 to 0.1• Can be auto ..
2SC4784 , Silicon NPN Epitaxial
2SC4784YA-TL-E , Silicon NPN Epitaxial
2SC4787 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4791 , Silicon NPN Epitaxial
2SA1826
