2SA1822 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS Unit in mmHIGH SPEED DC-DC CONVERTER APPLICATION1010.3¢3.2:0.22.7i0.2Excellent Switchi ..
2SA1826 ,PNP Epitaxial Planar Silicon Transistors 100V/3A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1831 ,PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1832 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1832 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency Gen ..
2SA1832F ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SC4780 ,TransistorAbsolute Maximum Ratings (Ta=25°C)Item Symbol A Value UnitCollector—Base Voltage VCBO 25 VCollector ..
2SC4783 ,NPN transistorFEATURES • High DC current gain: hFE2 = 200 TYP. 3• High voltage: VCEO = 50 V 0 to 0.1• Can be auto ..
2SC4784 , Silicon NPN Epitaxial
2SC4784YA-TL-E , Silicon NPN Epitaxial
2SC4787 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4791 , Silicon NPN Epitaxial
2SA1822
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND SPEED DC-DC CONVERTER APPLICATIONS
TOSHIBA ZSA1822
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SA1822
HIGH VOLTAGE SWITCHING APPLICATIONS
HIGH SPEED DC-DC CONVERTER APPLICATION
It Excellent Switching Times
ton-- 1.0ps (Max.), tf=1.0ps (Max.) at IC-- -0.3A
0 High Collector Breakdown Voltage .' VCEO= -400V
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.7510.15
Collector-Base Voltage VCBO -400 V 2.54AO.25 2.54f..0.25
Collector-Emi; Voltage VCEO -400 V ii, 1 2 3 :2 ni,:."
Emitter-Base Voltage VEBO -7 V "g” - g.
Collector Current IC - 1 A l. BASE
Base Current IB -0.5 A 2. COLLECTOR
Collector Power Ta=25°C PC 2.0 W 3. EMITTER
Dissipation Te = 25°C 25 JEDEC -
J unction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -55--150 "C TOSHIBA 2-10R1A
Weight .' 1.7g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 400V, IE = 0 - - - 1 p A
Emitter Cut-off Current IEBO VEB = - 7V, IC = 0 - - - 1 ,1 A
Collector-Emitter
Breakdown Voltage V (BR) CEO IC - - lOmA, IB - 0 - 400 - - V
V = -5V, I = -0.3A 30 - 100
DC Current Gain hFE CE C
VCE = - 5V, 10 = -0.5A 20 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC - -0.3A, IB - -30rnA - -0.25 -1.0 V
Base-Emitter
Saturation Voltage VBE(Sat) IC - -0.3A, IB - -30mA - -0.75 - 1.2 V
Rise Time ton 20ps INPUT WI OUTPUT - - 1.0
Switching . :“ljFlle Et i 2
Time Storage Time tstg 1B1 . co - - 5.0 gs
. - 1B1 =IB2 = 30mA, VCC"--. - 200V
Fall Time tf DUTY CYCLE < 1% - - 1.0
1 2001-10-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
IC - VCE
COMMON
EMITTER
To = 25°C
0 - 2 - 4 - 6 - 8 - 10 - 12 - l4
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON
EMITTER
IC/IB = 10
Te-- 125°C
-30 -100
COLLECTOR CURRENT IC (mA)
-300 -1000
hFE - IC
COMMON
EMITTER
V =-5V
300 CE
Tc=125°C
- 30 - 100
COLLECTOR CURRENT IC (mA)
-300 -1000
10 (A)
COLLECTOR CURRENT
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
SWITCHING TIME (/15)
2SA1822
IC - VBE
COMMON
EMITTER
VCE = - 5V
Te = 125°C
0 -0.2 -0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE VBE (V)
30 VBE (sat) - 10
COMMON
EMITTER
IC/IB=10
-30 - 100 -300
COLLECTOR CURRENT 10 (mA)
SWITCHING CHARACTERISTICS
IC /13 = 10
- IBI = 1132
tgtg PULSE WIDTH = 20prs
DUTY CYCLES 1%
Te = 25°C
'0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
IC - VCE
COMMON
EMITTER
To = 25°C
0 - 2 - 4 - 6 - 8 - 10 - 12 - l4
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON
EMITTER
IC/IB = 10
Te-- 125°C
-30 -100
COLLECTOR CURRENT IC (mA)
-300 -1000
hFE - IC
COMMON
EMITTER
V =-5V
300 CE
Tc=125°C
- 30 - 100
COLLECTOR CURRENT IC (mA)
-300 -1000
10 (A)
COLLECTOR CURRENT
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
SWITCHING TIME (/15)
2SA1822
IC - VBE
COMMON
EMITTER
VCE = - 5V
Te = 125°C
0 -0.2 -0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE VBE (V)
30 VBE (sat) - 10
COMMON
EMITTER
IC/IB=10
-30 - 100 -300
COLLECTOR CURRENT 10 (mA)
SWITCHING CHARACTERISTICS
IC /13 = 10
- IBI = 1132
tgtg PULSE WIDTH = 20prs
DUTY CYCLES 1%
Te = 25°C
'0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA ZSA1822
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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