2SA1804 ,Silicon PNP Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1812 , High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V
2SA1813 ,PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Driver, Muting Circuit ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1815 ,PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1815 ,PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier ApplicationsFeatures Package Dimensions · High power gain : PG=25dB (f=100MHz).unit:mm · High cutoff frequency ..
2SA1818 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC4732 , Transistors for TV Display Video Output Use
2SC4738 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency Gen ..
2SC4738 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC4738F ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC4738F ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency G ..
2SC4738F-GR , Audio Frequency General Purpose Amplifier Applications
2SA1804
Silicon PNP Power Transistors TO-3PFM package
TOSHIBA ZSA1804
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SAll804,
POWER AMPLIFIER APPLICATIONS Unit in mm
15.8105 35:02 3.5
0 Complementary to 2SC4689 m
ui '". a
0 Recommend for 55W High Fidelity Audio Frequency Amplifier Q E l
output Stage. vi,':. 'c'
MAXIMUM RATINGS (Tc = 25°C) sg' "
CHARACTERISTIC SYMBOL RATING UNIT t g E
Collector-Base Voltage VCBO - 120 V 5.45 t 0.2
Collector-Emi; Voltage VCEO - 120 V c, anstk2,
Emitter-Base Voltage VEBO -5 V F i?,
D I - ,
Collector Current C C 8 A
Pulse ICP - 16
1. BASE
Base Current IB -0.8 A 2. COLLECTOR
Collector Power Dissipation P 70 W 3. EMITTER
(Tc: 25°C) C JEDEC -
J unction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -5lr-150 "C TOSHIBA 2-16F1A
Weight : 5.8g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 5.0 PA
Emitter Cut-off Current IEBO VEB = - 5V, 1C = 0 - - - 5.0 PA
Collector-Emi;
Breakdown Voltage V(BR)CEO IC - - 50mA, 1B - 0 - 120 - - V
hFE(1)
V = -5V, I = -1A 55 - 160
DC Current Gain (Note) CE C
hFE(2) VCE = -5V, 1C = -4A 35 75 -
Collector-Emi;
Saturation Voltage VCE(sat) 1C - -6A, IB-- -0.6A - -0.80 -2.0 V
Base-Emitter Voltage VBE VCE = - 5V, 1C = -4A - - 0.97 - 1.5 V
Transition Frequency fT VCE = - 5V, IC = - IA - 30 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 420 - pF
(Note) '. hFE(1) Classification R : 55--110, O .' 80--160
1 2001-10-29
TOSHIBA
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hpE
TRANSITION FREQUENCY fT (MHz)
IC - VCE
COMMON
EMITTER
Tc = 25''C
- 500 - 200 - 150
IB-- -10mA
0 - 2 - 4 - 6 - 8 - 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - 1C
COMMON EMITTER
500 VCE = - 5V
To: 100°C
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
fT - IC
COMMON
100 EMITTER
VCE=-5V
50 Tc=25°C
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
10 (A)
VOLTAGE VCE(saL) (v) COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
10 (A)
COLLECTOR CURRENT
2SA1804
IC - VBE
COMMON
EMITTER
VCE = - 5V
Te = 100''C 5 - 25
0 -0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON
EMITTER
IC / IB = 10
Tc = 100°C
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
l l l l l llll
-20 - IC MAX.(PULSED) X
10 _ I lllllll 100msg.
- :10 MAX.(CONTINUOUS) 10ms)k:
l l 1msy.(,
-5 N , l
-3 N. \ l
DC OPERATION N ' l
(Tc=25°C) sl),
-0.5 X SINGLE NONREPETITIVE l l
-0.3 PULSE Tc=25°C
CURVES MUST BE DERATED l
LINEARLY WITH INCREASE
0 1 IN TEMPERATURE. VCEO MAX.
'_1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1804
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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