2SA1790 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1797 T100Q , Power Transistor (−50V, −3A)
2SA1797 T100Q , Power Transistor (−50V, −3A)
2SA1797T100Q , Power Transistor (−50V, −3A)
2SA1804 ,Silicon PNP Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1812 , High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V
2SC4695 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High DC current gain.2018B · High ..
2SC4702 , High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
2SC4703 ,MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETSILICON TRANSISTOR2SC4703MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIERNPN SILICON ..
2SC4703-T1 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR
2SC4710 ,High-Voltage Amp, High-Voltage Switching ApplicationsFeatures. High breakdown voltage (VCEO min= 2100V).. Small Cob (typical Cob =1.3pF).. Wide ASO.. Hi ..
2SC4710 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 2100 VCollector-to-Emi; Vo ..
2SA1790
