2SA1783 ,PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORSOrdering numbeszN 3340Fentu res' Capable of being used in the low frequency to high frequency range ..
2SA1784 ,PNP Epitaxial Planar Silicon Transistor High Voltage Driver ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High breakdown voltage (V ‡ 400V). ..
2SA1784 ,PNP Epitaxial Planar Silicon Transistor High Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1787 ,PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1790 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1797 T100Q , Power Transistor (−50V, −3A)
2SC4694 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High DC current gain.2059B · High ..
2SC4695 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High DC current gain.2018B · High ..
2SC4702 , High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
2SC4703 ,MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETSILICON TRANSISTOR2SC4703MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIERNPN SILICON ..
2SC4703-T1 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR
2SC4710 ,High-Voltage Amp, High-Voltage Switching ApplicationsFeatures. High breakdown voltage (VCEO min= 2100V).. Small Cob (typical Cob =1.3pF).. Wide ASO.. Hi ..
2SA1783
