2SA1778 ,PNP Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1780 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SA1783 ,PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORSOrdering numbeszN 3340Fentu res' Capable of being used in the low frequency to high frequency range ..
2SA1784 ,PNP Epitaxial Planar Silicon Transistor High Voltage Driver ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High breakdown voltage (V ‡ 400V). ..
2SA1784 ,PNP Epitaxial Planar Silicon Transistor High Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1787 ,PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4686A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS.TOSHIBA 2SC4686,2SC4686A- IvvV!v‘ Iv-TV DYNAMIC FOCUS
2SC4690 ,Silicon NPN Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4691 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1.6±0.1Parameter Symbol Rating Unit 5˚Collector-base voltage (Em ..
2SC4691 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4691J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4694 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High DC current gain.2059B · High ..
2SA1778
