2SA1771 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS Unit in mm0 Low Collector Saturation Voltage 10- + o. 3 " " + o. 2 2.Tt 0.2-- Am," \,. ..
2SA1772 ,PNP Epitaxial Planar Silicon Transistor High-Voltage Driver ApplicationsFeatures Package Dimensions · Large current capacity (I =1A).C unit:mm · High breakdown votlage (V ..
2SA1773 ,Epitaxial Planar Silicon Transistor High Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta: 25°C unitCollector-to-Base Voltage VCBO (-)400 VColleetoriEmiteer V ..
2SA1774 ,PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitPower Dissipation (Note 1) P 150 mWDORDERING I ..
2SA1774 R , General Purpose Transistor
2SA1774 S , General Purpose Transistor
2SC4669 , Switching Power Transistor(10A NPN)
2SC4669 , Switching Power Transistor(10A NPN)
2SC4670 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC4672-P , NPN Plastic-Encapsulate Transistors
2SC4673 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4680 , Silicon NPN Epitaxial
2SA1771
Silicon PNP Power Transistors TO-220F package
TOSHIBA 2SA1771
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
2SA'ii'771
HIGH CURRENT SWITCHING APPLICATIONS
0 Low Collector Saturation Voltage
.' VCE (sat)" -0.4V (Max.) (at IC-- -6A)
0 High Speed Switching Time .' tstg=0.6ps (Typ.)
0 High Emitter-Base Breakdown Voltage
: V(BR)EBO= -14V (Min.)
MAXIMUM RATINGS (Tc = 25°C)
0.75 10.15
CHARACTERISTIC SYMBOL RATING UNIT 2.54*0.25 2.54 A0.25
Collector-Base Voltage VCBO - 80 V ,"2 1 2 3 , N
Collector-Emitter Voltage VCEO - 80 V §;E::I§
Emitter-Base Voltage VEBO - 14 V 2 -
Collector Current IC - 12 A 1. B ASE
Base Current IB - 1.2 A 2. COLLECTOR
fiyeitg,' Power Dissipation PC 30 W 3. EMITTER
(Tc - 25 C) JEDEC -
J unction Temperature Tj 150 "C JEIT A SC-67
Storage Temperature Range Tstg -55--150 "C TOSHIB A 2-10RI A
Weight : 1.7g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector CU-off Current ICBO VCB= -80V, IE =0 - - - 10 PA
Emitter Cut-off Current IEBO VEB = - 14V, IC = 0 - - - 10 PA
Collector-Emitter - -
Breakdown Voltage V (BR) CEO IC-- -50mA, 1B =0 -80 - - V
h V = - IV I = - IA 1 - 320
DC Current Gain FE (1) CE ' C 00
hFE (2) VCE = - IV, 1C = -6A 40 - -
Saturation Collector-Emitter VCE (sat) IC-- -6A, IB = -0.3A - -0.2 -0.4 V
Voltage Base-Emitter VBE (sat) IC-- -6A, IB = -0.3A - _0.9 - 1.2
Transition Frequency fT VCE = -5V, IC = - IA - 50 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE =0, f = lMHz - 300 - pF
Turn-on Time ton Fi-s' INPUT LBsg OUTPUT - 0.2 -
Switchin . IB2 r,c, C4
Time g Storage Time tstg IBJLFL B1 “3 - 0.6 - ps
. -IBI =IB2 =0.3A V = -30V
Fall Time tf DUTY CYCLESI% CC - 0.1 -
2001 -1 0-29
TOSHIBA
2SA1771
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hFE
IC - VCE
-8 -10
COMMON
EMITTER
Tc = 25''C
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - IC
IB---10mA
COMMON EMITTER
Te = l 00°C
COLLECTOR CURRENT IC (A)
- 0.3 - 0.5
COLLECTOR CURRENT
hFE - IC
COMMON EMITTER
VCE = - IV
Ic (A)
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR—EMITTER VOLTAGE VCE
VCE(sat) (V)
COLLECTOR—EMITTER SATURATION
VOLTAGE
VCE - IC
COMMON
EMITTER
1B = - 10mA Tc = 25°C
0 -2 -4 -6 -8 -10 -12
COLLECTOR CURRENT IC (A)
VCE - IC
-70 - 150 -300
COMMON
EMITTER
IB-- -10mA Tc---55''C
0 -2 -4 -6 -8 -10 -12
COLLECTOR CURRENT IC (A)
VCE (sat) - IC
COMMON EMITTER
-0.5 IcllB=20
Tc = 100°C
-0.1 -0.3-0.5 -1 -3 -5 -10 -20
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA
VBE(sat) - IC
COMMON EMITTER
IC / IB = 20
Tc = - 55°C
VOLTAGE VBE (sat) (V)
BASE-0.1 -0.3-0.5 -1 -3 -5 -10 -20
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
('2) NO HEAT SINK
TRANSIENT THERMAL RESISTANCE
rth (“Cl W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
co Tc = Ta
INFINITE HEAT-SINK
Ce? WITHOUT HEAT-SIN K
COLLECTOR POWER DISSIPATXON
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
10 (A)
COLLECTOR CURRENT
COLLECTOR CURRENT IC (A)
2SA1771
IC - VBE
COMMON EMITTER
VCE---1V
Tc = 100°C
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
BASEaMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
IC MAX. (PULSED) X
- 10 's. NI,,
\ 10msX\\\
- 5 IC MAX. , N h
(CONTINUOUS) \ N N
-3 Ill N. N
DC OPERATION\
Tc = 25°C
-0.5 X SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0 1 IN TEMPERATURE. VCEO MAX.
-1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA1771
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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