2SA1761 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1763 ,PNP Epitaxial Planar Silicon Transistor High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1763 ,PNP Epitaxial Planar Silicon Transistor High-Speed Switching ApplicationsFeatures Package Dimensions · Fast switching speed.unit:mm · Low collector saturation voltage.2059 ..
2SA1764 ,High-Speed Switching ApplicationsOrdering nuniber: EN 31808Featu res. Fast switching speedNo.3180B. Low collector saturation voltage ..
2SA1765 ,PNP Epitaxial Planar Silicon Transistor High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1766 ,PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4664 , Switching Power Transistor(8A NPN)
2SC4666 ,Transistor Silicon NPN Epitaxial Type (PCT process)Applications High h : h = 600~3600 FE FE High voltage: V = 50 V CEO High collector curren ..
2SC4669 , Switching Power Transistor(10A NPN)
2SC4669 , Switching Power Transistor(10A NPN)
2SC4670 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC4672-P , NPN Plastic-Encapsulate Transistors
2SA1761
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SA1761
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
2SA1l7tiM
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.1 MAX.
0 Low Collector-Emi; Saturation Voltage g
: VCE(sat)= -0.5V (Max.) (IC = - 1.5A) 2
0 High Speed Switching Time : tstg=0.2/¢s(Typ.) 0.75MAX.
1.0MAX.
o Complementary to 2SC4604. 0.8MAX. if E
MAXIMUM RATINGS (Ta = 25°C) F
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO - 60 V . g
Collector-Emi; Voltage VCEO -50 V Ct"! s-):':', if
Emitter-Base Voltage VEBO -6 V , if,
Collector Current 10 -3 A ;- tE/gf/lr,
. LLE T R
Base Current IB -0.6 A 3. BASE
Collec.tor Power Dissipation PC 900 mW JEDE C T O-92MOD
J unctlon Temperature Tj 150 "C JEITA
Storage Temperature Range Tstg -55--150 "C -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -60V, IE=0 - - -0.1 PA
Emitter Cut-off Current IEBO VEB= -6V, Ic=0 - - -0.1 PA
Collector-Emitter - -
Breakdown Voltage V(BR)CEO IC - - lOmA, IE - 0 -50 - - V
h = -2 I = - 1 mA 12 - 4
DC Current Gain FE(1) VCE V, C 00 0 00
hFE(2) VCE = -2V, IC = -2A 40 - -
Collector-Emi; - -
Saturation Voltage VCE(sat) IC - - 1.5A, IB - - 75mA - - - 0.5 V
Base-Emitter - -
Saturation Voltage VBE(Sat) IC - - 1.5A, IB - - 75mA - - - 1.2 V
Transition Frequency fT VCE = -2V, IC = - 100mA - 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = MHz - 32 - pF
Turn-on Time ton 1132 I_Bg OUTPUT - 0.1 -
S . t hi IB1 INPUT - C}
WI c 1n . I 0
Time g Storage Time tstg 2;; BI N - 0.2 - ,us
-I =I =75 A = -
Fall Time tf L?ll, CgéLE §T% VCC 30V - 0.1 -
1 2001-10-29
TOSHIBA
IC - VCE
A -li0
S? -30
ttt -10
B B 5mA
COMMON EMITTER
Ta=25°C
0 -1 -2 -3 -4
c0LLEcT0R-EMITTER VOLTAGE VCE (V)
hFE - IC
Ta=100°C
© COMMON EMITTER
VCE-- -2V
-0.001-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT 10 (A)
VBE(sat) - IC
COMMON EMITTER
g, Ic/IB=20
t2> -1
-0.001-0.003 -0.01-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
Ic (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER SATURATION
VOLTAGE chm (V)
[C (A)
COLLECTOR CURRENT
2SA1761
IC - VBE
COMMON EMITTER
VCE = - 2V
0 -0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
- 5 COMMON EMITTER
-3 10/IB=20
Ta=100°C
-0.03 25
-0.001-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
-10 ....... Irllllf ll
I . l l
-5 HC MAX.(PULSE)).k. Ims8
HC MAX.(CONTINUOUS) N l
-3 "s. N. befoms8
\ . N C):' 100ms.2f
-1 N lsy.C. "ie (
EE (Ta=25°C) "N _ l
-0.5 = DC OPERATION ,
-0.3 It
-1 'N l :22:
ik. SINGLE NONREPETITIVE N "
-0.05 PULSE Ta=25°C 's
-0.03 CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN a
o 01 TEMPERATURE. VCEO MAX.
-0.03 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA1761
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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