2SA1735 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) (I = −500 mA) CE (sat) C High speed ..
2SA1736 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) (I = −1.5 A) CE (sat) C High speed s ..
2SA1737 ,For video amplifierElectrical Characteristics (Ta=25˚C)nParameter Symbol Conditions min typ max UnitCollector cutoff ..
2SA1738 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1739 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1740 ,PNP Epitaxial Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4630 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4630LS ,NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC4632 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Basg Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4632LS ,NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsFeatures Package Dimensions•High breakdown voltage(V min=1200V).CEO unit : mm•Small Cob(typical Cob ..
2SC4633 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectur-to-Emitter ..
2SC4633LS ,NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SA1735
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1735 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) High speed switching time: tstg = 0.25 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540
Maximum Ratings (Ta = 25°C) PC
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
