2SA1681 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SA1682 ,PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver ApplicationsFeatures Package Dimensions · High breakdown voltage (V ‡ 300V).unit:mmCEO · Small reverse transfer ..
2SA1685 ,PNP Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1687 ,PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1688 ,PNP Epitaxial Planar Silicon Transistors High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1694 , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SC4571-T2 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4571NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIO ..
2SC4572 ,NPN Triple Diffused Planar Silicon Transistor 800V/20mA Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4576 ,High-speed switchingAbsolute Maximum Ratings (T =25˚C)nC2.5– 0.2–Parameter Symbol Ratings Unit0.6– 0.10.8– 0.1Collecto ..
2SC4576 ,High-speed switchingFeaturesn 1.4– 0.1––8.0– 0.2l High-speed switchingl High collector to base voltage VCBO–l Wide area ..
2SC4577 ,NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCollector to Base Voltage VCBO (- )20 VCollector to Emitter ..
2SC4579 ,NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1681
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1681 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High speed switching time: tstg = 300 ns (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409
Maximum Ratings (Ta = 25°C) PC
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
