2SA1680 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SA1680TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)ZSA1680POWER AMPLIFIER
2SA1680 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS I 5.1 MAX. Iti::zzr=ei,Low Collector Saturation Voltagev'__vv"_ - vvov: VCE(sat) = -0. ..
2SA1681 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SA1682 ,PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver ApplicationsFeatures Package Dimensions · High breakdown voltage (V ‡ 300V).unit:mmCEO · Small reverse transfer ..
2SA1685 ,PNP Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1687 ,PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4571-T1 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4571NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIO ..
2SC4571-T2 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4571NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIO ..
2SC4572 ,NPN Triple Diffused Planar Silicon Transistor 800V/20mA Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4576 ,High-speed switchingAbsolute Maximum Ratings (T =25˚C)nC2.5– 0.2–Parameter Symbol Ratings Unit0.6– 0.10.8– 0.1Collecto ..
2SC4576 ,High-speed switchingFeaturesn 1.4– 0.1––8.0– 0.2l High-speed switchingl High collector to base voltage VCBO–l Wide area ..
2SC4577 ,NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCollector to Base Voltage VCBO (- )20 VCollector to Emitter ..
2SA1680
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA ZSA1680
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1680
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.1 MAX.
0 Low Collector Saturation Voltage ii.
: VCE(sat) = -0.5V (Max.) (10 = - IA)
t).75MAX.
0 High Collector Power Dissipation : Pc=900mW (Ta=25°C) 1.0MAX.
o High Speed Switching Time : tstg=300ns(Typ0 0.8MAX. g E
It Complementary to 2SC4408. N F
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT _§ A
_ F , - <1
Collector-Base Voltage VCBO - 60 V E?
Collector-Emitter Voltage VCEO -50 V l. EMITTER
Emitter-Base Voltage VEBO -6 V g field"""
Collector Current IC - 2 A JEDE C T O- 9 2M OD
Base Current IE -0.2 A
. . . JEITA -
Collector Power Dissipation PC 900 mW
J unction Temperature Tj 150 "C TOSHIBA 2-5JIA
Storage Temperature Range Tstg -55-150 "C Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -60V, IE =0 - - -1.0 PA
Emitter Cut-off Current IEBO VEB= -6V, IC =0 - - -1.0 PA
Collector-Emitter - -
Breakdown Voltage V(BR)CEO IC - - lOmA, IB - 0 -50 - - V
h V = -2V, I = -100mA 120 - 400
DC Current Gain FE(1) CE C
hFE(2) VCE = -2V, IC = - 1.5A 40 - -
Collector-Emitter - -
Saturation Voltage VCE(sat) IC-- - IA, IB - -0.05A - - -0.5 V
Base-Emitter - -
Saturation Voltage VBE(sat) IC - - IA, 1B - - 0.05A - - - 1.2 V
Transition Frequency fT VCE = -2V, IC = - 100mA - 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 23 - pF
OUTPUT
Turn-on Time ton 20/15 INPUT I_BZ - 0.1 -
Switchin . " IB2 rc, o
Time g Storage Time tstg IBIILF B1 m - 0.3 - ps
. -IBI =IB2 =0.05A V = -30V
Fall Time tf DUTY CYCLESI% CC - 0.1 -
1 2001-10-29
TOSHIBA
IC - VCE
10 (A)
IE: -2mA
COLLECTOR CURRENT
COMMON EMITTER Ta=25°C
0 -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
5 COMMON EMITTER
IC/IB=20
VCE(sat) (V)
.o .<'=
GO 0'!
Ta = 100°C
VOLTAGE
-0.03 -25
COLLECTOR-EMITTER SATURATION
-0.001-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE = - 2V
Ta= 100°C 25
COLLECTOR CURRENT 10 (A)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE vgmm (V)
10 (A)
COLLECTOR CURRENT
2SA1680
hFE - IC
Ta = 100°C
COMMON EMITTER
VCE = -2V
-0.001-0.003 -0.01-0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT Ic (A)
VBE(sat) - IC
- 1 Ta = -25''C
-0.5 25
100 COMMON EMITTER
IcllB=20
-0.001-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
SAF E OPERATING AREA
X SINGLE NONREPETITIVE PULSE
Ta225°C
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
-5 IC MAX.(PULSED)).K. Irnsyf
-3 10 MAX. (CONTINUOUS)
100msyd.
-0.3 IC MAX.(Ta=25°C)
VCEO MAX.
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1680
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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