2SA1648-Z-E1 ,PNP epitaxial type silicon transistorfeatures a very low collector-to-emitter saturation voltage. 6.5 ±0.2 2.3 ±0.2This transistor is i ..
2SA1648-Z-E2 ,PNP epitaxial type silicon transistorfeatures a very low collector-to-emitter saturation voltage. 6.5 ±0.2 2.3 ±0.2This transistor is i ..
2SA1649 ,High-speed switchingfeatures a very low collector-to-emittersaturation voltage.This transistor is ideal for use in swit ..
2SA1649-Z-E1 ,High-speed switchingfeatures a very low collector-to-emittersaturation voltage.This transistor is ideal for use in swit ..
2SA1649-Z-T1 ,High-speed switchingDATA SHEETSILICON POWER TRANSISTOR2SA1649, 2SA1649-ZPNP SILICON EPITAXIAL POWER TRANSISTORFO ..
2SA1650 ,PNP epitaxial type silicon transistorFEATURES• Mold package that does not require an insulating board orinsulation bushing Fast switchi ..
2SC4536 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4536MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4538 , Silicon NPN Power Transistors
2SC4539 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 700 mA) CE (sat) C High speed sw ..
2SC4540 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 500 mA) CE (sat) C High speed swi ..
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 1.5 A) CE (sat) C High speed swi ..
2SA1648-2SA1648-Z-2SA1648-Z-E1-2SA1648-Z-E2
