2SA1611 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector C ..
2SA1611 ,Silicon transistorapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Collector to Base Voltage Vceo —60
Colle ..
2SA1611 ,Silicon transistorDATA SHEET
SILICON TRANSISTOR
ZSA1611
AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER
PNP SILI ..
2SA1611 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector C ..
2SA1611-T1 ,Silicon transistorFEATURES
' Complementary to 28C4177
0 High DC Current Gain: hFE = 200 TYP. (VCE = —6.0 V, Ic ..
2SA1612 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (T, =25 "C) _
Z
SYMBOL TYP. AX. UNIT
tCBO
CHARACTERISTIC
..
2SC4478 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta-- 25°C unit _Collector.to Base Voltage VCBO 400 VCollector-toEmitLer ..
2SC4480 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, General Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4481 ,NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4486 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4488 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4489 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1611-2SA1611-T1
